Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers
were found to contain Ga vacancies in defect complexes. The density of the vacancy …

We have investigated the electronic band structure and optical transparency conditions of In
x Ga 1− x As 1− y N y∕ Ga As quantum well (QW) using 10-band, 8-band and 6-band k∙ p …

We have investigated by photoluminescence spectroscopy and x-ray diffraction the
influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga …

The nitrogen distribution in Ga As N∕ Ga As quantum wells (QWs) grown by molecular
beam epitaxy is studied on the atomic scale by cross-sectional scanning tunneling …

We present the 1.55 μm GaInNAs/GaAs multiple quantum well (QW) heterostructures with a
GaNAs or a GaInNAs barrier and space layer (BSL). The stronger improvement of …

Ga N As∕ Ga As quantum wells with high N concentrations, grown by molecular beam
epitaxy, have been investigated by secondary-ion mass spectrometry (SIMS), high …

The conduction subband structure of InGaAsN-GaAs quantum wells (QWs) is calculated
using the band anticrossing model, and its influence on the design of long-wavelength …

The linewidth enhancement factors of lattice-matched 1.5 μm wavelength InGaNAs/GaAs
and InGaAs/InP single-quantum-well structures are calculated using microscopic theory and …

Structural and optical properties of GaInNAs/GaAs quantum structures grown by
metalorganic vapour phase epitaxy (MOVPE) are studied. The growth of arsenide–nitrides …

This work presents the epitaxial growth and material properties of InGaAsN epilayers
obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was …