Power electronic systems play an increasingly important role in providing high-efficiency
power conversion for adjustable-speed drives, power-quality correction, renewable-energy …

The increasing demand for higher power device utilization and reliability in power electronic
systems is driving the integration of condition monitoring and active control in power …

Junction temperature monitoring (JTM) is essential for reliability evaluation and health
management for insulated-gate bipolar transistor (IGBT) modules, and thus is extensively …

Power cycling test is one of the important tasks to investigate the reliability performance of
power device modules in respect to temperature stress. From this, it is able to predict the …

This paper presents a diagnostic and prognostic condition monitoring method for insulated-
gate bipolar transistor (IGBT) power modules for use primarily in electric vehicle …

Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the
junction temperature extraction and prediction of power semiconductor devices. In this …

This paper examines a number of techniques for junction temperature estimation of silicon
carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive …

Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic
device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures …

A method for in situ high-bandwidth junction temperature estimation of insulated-gate
bipolar transistors is introduced in this paper. The method is based on the acquisition of the …

This paper examines dynamic temperature-sensitive electrical parameters (TSEPs) for SiC
MOSFETs. It is shown that the switching rate of the output current (dI DS/dt) coupled with the …