Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
Lead-free ferroelectric materials: Prospective applications
The year of 2021 is the 100th anniversary of the first publication of ferroelectric behaviour in
Rochelle salt, focussing on its piezoelectric properties. Over the past many decades, people …
Rochelle salt, focussing on its piezoelectric properties. Over the past many decades, people …
Evolution of pronounced ferroelectricity in Hf 0.5 Zr 0.5 O 2 thin films scaled down to 3 nm
CI Wang, HY Chen, CY Wang, TJ Chang… - Journal of Materials …, 2021 - pubs.rsc.org
The thickness scaling of the ferroelectric (FE) hafnium zirconium oxide (HZO) down to sub-
10 nm is essential in non-volatile memory devices. In this study, high remnant polarization …
10 nm is essential in non-volatile memory devices. In this study, high remnant polarization …
Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment
We report the improvement of ferroelectric (FE) amorphous InGaZnO 4 (a-IGZO) thin film
transistors (TFT) by Ar/O 2 plasma treatment and subsequent thermal annealing. The a-IGZO …
transistors (TFT) by Ar/O 2 plasma treatment and subsequent thermal annealing. The a-IGZO …
Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance …
X Guo, F Wang, Z Ma, X Shan, X Lin, Y Ji… - … Applied Materials & …, 2023 - ACS Publications
Negative capacitance field effect transistors made of Hf0. 5Zr0. 5O2 (HZO) are one of the
most promising candidates for low-power-density devices because of the extremely steep …
most promising candidates for low-power-density devices because of the extremely steep …
Toward low-thermal-budget Hafnia-based ferroelectrics via atomic layer deposition
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant
attention has been devoted to studying hafnia-based ferroelectric material systems due to …
attention has been devoted to studying hafnia-based ferroelectric material systems due to …
Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition
Y Ahn, Y Jeon, S Lim, J Kim, J Kim, H Seo - Surfaces and Interfaces, 2023 - Elsevier
This study introduces the use of plasma-enhanced atomic layer deposition (PEALD) for
growing ultrathin Zr-doped hafnium oxide (HfO 2-ZrO 2 or HZO) nanolaminates and the …
growing ultrathin Zr-doped hafnium oxide (HfO 2-ZrO 2 or HZO) nanolaminates and the …
[HTML][HTML] Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications
WJ Park, HJ Kim, JH Lee, JH Kim, SH Uhm, SW Kim… - Nanomaterials, 2024 - mdpi.com
Plasma-enhanced atomic layer deposition (ALD) is a common method for fabricating Hf0.
5Zr0. 5O2 (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and …
5Zr0. 5O2 (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and …
Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor
In this work, the endurance characteristics of Al-doped HfO 2 (HAO)-based metal-
ferroelectric-metal (MFM) capacitors (which were annealed at 1000 C) with various doping …
ferroelectric-metal (MFM) capacitors (which were annealed at 1000 C) with various doping …