Native point defects control many aspects of semiconductor behavior. Such defects can be
electrically charged, both in the bulk and on the surface. This charging can affect numerous …

The tight-binding method of modelling materials lies between the very accurate, very
expensive, ab initio methods and the fast but limited empirical methods. When compared …

We have examined Bi-induced surface structures of Si (001), formed in the vicinity of its
desorption temperature, by means of scanning tunnelling microscopy and reflection high …

Atomically perfect bismuth lines form on Si (001) by a selective desorption process around
the temperature at which most of the bismuth desorbs from bismuth epitaxial layers. The …

The combination of scanning tunnelling microscopy (STM) and non-contact atomic force
microscopy (nc-AFM) allows enhanced extraction and correlation of properties not readily …

When the scanning tunnelling microscope was invented, the world was amazed at the
atomic resolution images of surfaces which could be obtained. It soon became apparent that …

We have improved and evaluated hydrophilic and hydrophobic chemical treatments to
prepare Si (001) and Si (111) wafers for epitaxial growth substrates. In the hydrophilic case …

A scanning tunneling microscope (STM) combines unique capabilities in imaging and
spectroscopy with atomic precision, and it can obtain energy-resolved spectroscopic data …

We revisit and refine the interpretation of the scanning tunneling microscopy (STM) images
of the Si (100) dimers, based on results from an extensive set of STM observations carried …

In this article, we present a novel method for decoupling surface electronic properties from
topographic surface variations in scanning tunneling microscope (STM). In a conventional …