Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact
logic circuits with low power consumption in maintaining the configuration. In this paper, we …

Abstract Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene,
and transition metal dichalcogenides have attracted intense research attention because of …

We report a physics-based surface-potential compact model to describe current-voltage (IV)
relationship in a few-layered ambipolar black phosphorus (BP) transistors. To model the …

We report a charge-based analytic and explicit compact model for field-effect transistors
(FETs) based on 2-D materials (2DMs), for the simulation of 2DM-based analog and digital …

In this article, we report the development of a novel physics-based analytical model for
explaining the current-voltage relationship in Schottky barrier (SB) 2-D-material field effect …

Wide spectrum, highly sensitive photodetectors are of great importance for many
optoelectronic applications. MoS2 is an extremely desirable two-dimensional (2-D) material …

The accuracy of contact resistance values of two‐dimensional (2D) field‐effect transistors
extracted with the Y‐function considering the impact of the intrinsic mobility degradation is …

In this work, an evaluation of the contact quality of black phosphorus field-effect transistors
from different technologies previously reported is performed by means of an efficient and …

Three main ambipolar compact models for Two-Dimensional (2D) materials based Field-
Effect Transistors (2D-FETs) are reviewed:(1) Landauer model,(2) 2D Pao-Sah model, and …

In this work, we explore the output-conductance function (G-function) to interpret the device
characteristics of two-dimensional (2D) semiconductor transistors. Based on analysis of the …