AlGaN-based deep ultraviolet micro-LED emitting at 275 nm

H Yu, MH Memon, D Wang, Z Ren, H Zhang… - Optics Letters, 2021 - opg.optica.org
The investigation of electrical and optical properties of micro-scale AlGaN deep ultraviolet
(DUV) light-emitting diodes (LEDs) emitting at∼ 275nm was carried out, with an emphasis …

Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

J Kou, CC Shen, H Shao, J Che, X Hou, C Chu… - Optics express, 2019 - opg.optica.org
In this work, the size-dependent effect for InGaN/GaN-based blue micro-light emitting diodes
(µLEDs) is numerically investigated. Our results show that the external quantum efficiency …

Improvement of the emission intensity of GaN-based micro-light emitting diodes by a suspended structure

Y Mei, M Xie, T Yang, X Hou, W Ou, H Long… - ACS …, 2022 - ACS Publications
Herein, suspended GaN-based micro-light emitting diodes (LEDs) are ingeniously proposed
and fabricated, showing a substantially enhanced light emission compared to conventional …

Synthesis of highly crystalline black phosphorus thin films on GaN

D Han, Q Liu, Q Zhang, J Ji, S Sang, B Xu - Nanoscale, 2020 - pubs.rsc.org
Black phosphorus (BP) has recently garnered significant attention due to its specific physical
properties. At present, high-quality few-layer and thin-film BP is obtained principally by …

Light extraction efficiency of GaN-based micro-scale light-emitting diodes investigated using finite-difference time-domain simulation

HY Ryu, J Pyo, HY Ryu - IEEE Photonics Journal, 2020 - ieeexplore.ieee.org
We conducted a systematic investigation of the light extraction efficiency (LEE) of GaN-
based vertical micro-scale light-emitting diode (μ-LED) structures using three-dimensional …

[HTML][HTML] Atomic layer deposition technology for the development of high-quality, full-colour micro-LED displays

Z Yan, S Liu, Y Sun, R Wu, Y Lin, HC Kuo, Z Chen… - Next …, 2024 - Elsevier
Micro light-emitting diodes (μLEDs) with unparalleled photoelectric characteristics are
essential components for developing metaverse-related technologies. Immersive displays …

Effects of Chip Size and Thermally Oxidized AlxGa2–xO3 Sidewall on the Optoelectrical Characteristics of AlGaN-Based Deep Ultraviolet Micro-Light-Emitting …

TY Wang, WC Lai, QJ Xie, SP Chang… - ACS Applied …, 2024 - ACS Publications
The thermally oxidized Al x Ga2–x O3 sidewall was introduced to deep ultraviolet micro-light-
emitting diodes (DUV μ-LEDs) to improve optoelectronic performance. Reducing the chip …

Quantitative Evaluation of Carrier Dynamics in Blue Micro-LEDs: The Impact of Size and Current Density on Recombination and Injection Efficiency

H Wang, X Jia, Y Guo, Z Liu, Y Zhou… - ACS Applied …, 2024 - ACS Publications
In this work, we fabricated blue micro-LEDs of five different sizes to investigate the size-
dependent carrier dynamics. To make the results more precise, micro-LEDs with integrated …

Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode

D Han, S Ma, Z Jia, W Jia, P Liu, H Dong… - Journal of Physics D …, 2017 - iopscience.iop.org
Unlike the typical'S-shaped'temperature dependent behavior for InGaN/GaN light emitting
diodes (LEDs), the emission of the c-plane MQWs (C-QWs) close to V-shaped pits (V-pits) …

[HTML][HTML] Effect of in situ degradation on the atomic structure and optical properties of GaN-based green light-emitting diodes

Q Liu, D Han, S Ma, X Hao, Y Wei, B Cao… - Applied Physics …, 2020 - pubs.aip.org
The structure at the atomic scale and optical properties of GaN-based green light-emitting
diodes (LEDs) before and after in situ degradation were investigated by spherical aberration …