Hard x-ray nanofocusing by multilayer Laue lenses

H Yan, R Conley, N Bouet, YS Chu - Journal of Physics D …, 2014 - iopscience.iop.org
Multilayer Laue lens (MLL) is a new class of x-ray optics that offer great promise for
achieving nanometre-level spatial resolution by focusing hard x-rays. Fabricating an MLL via …

Removal of transition metal ternary and/or quaternary barrier materials from a substrate

B Ji, MJ Plishka, D Wu, PR Badowski… - US Patent …, 2008 - Google Patents
A process for the selective removal of a substance from a substrate for etching and/or
cleaning applications is disclosed herein. In one embodiment, there is provided a process …

Field effect modulated nanofluidic diode membrane based on Al2O3/W heterogeneous nanopore arrays

S Wu, F Wildhaber, A Bertsch, J Brugger… - Applied Physics …, 2013 - pubs.aip.org
We developed Al 2 O 3/W heterogeneous nanopore arrays for field effect modulated
nanofluidic diodes. They are fabricated by transferring self-organized nanopores of anodic …

A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III–V MOSFETs

X Li, RJW Hill, H Zhou, CDW Wilkinson… - Microelectronic …, 2008 - Elsevier
This paper investigates a low damage reactive ion etch (RIE) process to make thin silicon
nitride sidewall spacers for the fabrication of self-aligned sub-100nm gate length III–V metal …

Proportion quantitative analysis and etching of {110} planes on tungsten single crystal coating surface

R Mu, C Tan, X Yu - Journal of Alloys and Compounds, 2016 - Elsevier
Tungsten single crystal and poly crystal were treated by electrolytic etching in a 3% by
weight solution of NaOH in distilled water. The method for determining the proportion of …

Corrosão por plasma para tecnologias CMOS e microssistemas

CR Betanzo - 2003 - repositorio.unicamp.br
Esta tese apresenta os resultados do desenvolvimento e da otimização de uma tecnologia
própria na área de fabricação de dispositivos CMOS e Microssistemas, realizados no …

Optical emission spectrometry of plasma in low-damage sub-100 nm tungsten gate reactive ion etching process for compound semiconductor transistors

X Li, H Zhou, CDW Wilkinson… - Japanese journal of …, 2006 - iopscience.iop.org
In this study, we investigate in situ optical emission spectra from plasma in the reactive ion
etching (RIE) of tungsten, a suitable candidate for gate metallization in compound …

[图书][B] Microplasma transistor for harsh environment applications

P Pai - 2015 - search.proquest.com
Microplasmas are currently used in displays, two-terminal breakdown switches, light
sources, and medical instruments. They can also be used in miniaturized particle …

[PDF][PDF] Sub 10-nm Nanopantography and Nanopattern Transfer Using Highly Selective Plasma Etching

S Tian - 2015 - uh-ir.tdl.org
Nanopantography is a new patterning method for massively parallel writing of nanofeatures
over large areas. Billions of electrostatic lenses are first fabricated on top of a Si wafer using …

Ultra-thin InAlN/AlN barrier enhancement-mode high electron mobility transistors

C Ostermaier - 2011 - repositum.tuwien.at
For the last two decades, significant and rapid advances in the growth and technology of III-
N related semiconductors have yielded exciting performance for optical and electronic …