Spin-lasers: spintronics beyond magnetoresistance

I Žutić, G Xu, M Lindemann, PEF Junior, J Lee… - Solid State …, 2020 - Elsevier
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to
realize room-temperature spintronic applications, beyond the usual magnetoresistive effects …

Spin polarization modulation for high-speed vertical-cavity surface-emitting lasers

N Yokota, K Nisaka, H Yasaka, K Ikeda - Applied Physics Letters, 2018 - pubs.aip.org
The spin polarization modulation in birefringent vertical-cavity surface-emitting lasers
(VCSELs) is investigated theoretically and experimentally for obtaining tailored polarization …

Toward high-frequency operation of spin lasers

PE Faria Junior, G Xu, J Lee, NC Gerhardt, GM Sipahi… - Physical Review B, 2015 - APS
Injecting spin-polarized carriers into semiconductor lasers provides important opportunities
to extend what is known about spintronic devices, as well as to overcome many limitations of …

Mapping between quantum dot and quantum well lasers: From conventional to spin lasers

J Lee, R Oszwałdowski, C Gøthgen, I Žutić - Physical Review B—Condensed …, 2012 - APS
We explore similarities between the quantum wells and quantum dots used as optical gain
media in semiconductor lasers. We formulate a mapping procedure which allows a simpler …

Graphene spintronics: Spin injection and proximity effects from first principles

P Lazić, GM Sipahi, RK Kawakami, I Žutić - Physical Review B, 2014 - APS
Ferromagnet/graphene (F/Gr) junctions are important building blocks for graphene
spintronics. While simple models of spin injection are very successful for macroscopic …

Room-temperature spin polariton diode laser

A Bhattacharya, MZ Baten, I Iorsh, T Frost, A Kavokin… - Physical review …, 2017 - APS
A spin-polarized laser offers inherent control of the output circular polarization. We have
investigated the output polarization characteristics of a bulk GaN-based microcavity …

Tailoring chirp in spin-lasers

G Boéris, J Lee, K Výborný, I Žutić - Applied Physics Letters, 2012 - pubs.aip.org
The usefulness of semiconductor lasers is often limited by the undesired frequency
modulation, or chirp, a direct consequence of the intensity modulation, and carrier …

Intensity equations for birefringent spin lasers

G Xu, JD Cao, V Labinac, I Žutić - Physical Review B, 2021 - APS
Semiconductor spin lasers are distinguished from their conventional counterparts by the
presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized …

Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

T Aggarwal, A Udai, D Banerjee… - … status solidi (b), 2021 - Wiley Online Library
GaN‐based optoelectronic devices including light‐emitting diodes and lasers realized with
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …

Numerical investigation of direct IQ modulation of spin-VCSELs for coherent communications

N Yokota, K Ikeda, H Yasaka - Spintronics XIII, 2020 - spiedigitallibrary.org
We propose and numerically investigate a method for direct in-phase quadrature (IQ)
modulation of spin-controlled vertical-cavity surface-emitting lasers (spin-VCSELs) for …