Epitaxial insulators have a number of potential applications in the semiconductor industry.
These include semiconductor-on-insulator (SOI) structures, three-dimensional (3-D) and/or …

High-resolution core-level and Auger-electron spectroscopy, polarization-dependent near-
edge x-ray absorption, and angle-resolved photoemission are used to study the electronic …

The chemistry of actinide molecules and materials has shown remarkable conceptual
advancements in the past decade illustrating their unique reactivity profiles, when compared …

The bonding at the interface between calcium fluoride and the silicon (111) surface has
been studied with surface-sensitive core-level photoemission spectroscopy. The interface is …

Heteroepitaxial Al2O3 films were grown successfully on (100) Si substrates at substrate
temperatures above 1000° C by low‐pressure chemical vapor deposition with the use of N2 …

CaF2 films have been grown epitaxially on (100) and (111) Si substrates by molecular beam
epitaxy. These films have been characterized by electron microscopy, reflection high‐energy …

Metal fluorides, like CaF2, are interesting dielectric materials which are optically transparent
over a wide wavelength range down to the vacuum ultraviolet regime. In addition, CaF2 has …

Epitaxial layers of PbSe have been grown onto Si (111) by vacuum deposition techniques
using a (Ca, Ba) F2 buffer film. For lattice match, the buffer layer is graded with CaF2 at the …

The intensity oscillation of reflection high-energy electron diffraction (RHEED) was observed
for the first time during the growth of α-Al2O3 thin films. The observation was achieved in the …

The effects of 1 keV electron irradiation (current density typically 40 μA cm− 2) on the surface
structure of CaF2 (111) are studied by scanning force microscopy (SFM) to investigate the …