Recent progress in solution‐based metal oxide resistive switching devices
Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
Memristor fabrication through printing technologies: a review
Memristor got a significant attraction to be the next generation memory device due to its
small size, simple architecture, high density, and low power consumption. A memristor is a …
small size, simple architecture, high density, and low power consumption. A memristor is a …
Hollow cubic ZnSnO3 with abundant oxygen vacancies for H2S gas sensing
Z Wang, J Miao, H Zhang, D Wang, J Sun - Journal of hazardous materials, 2020 - Elsevier
The hollow cubic structure ZnSnO 3 with controllable concentration of oxygen vacancies
were prepared by the hydrothermal combined with alkali etching method. The morphology …
were prepared by the hydrothermal combined with alkali etching method. The morphology …
Optimizations of performance of cellulose acetate modified by ZnSnO3/ZnO nanocomposites: electrical, dynamic mechanical analysis, and antibacterial activity
AM Hezma, AM Labeeb, FG El Desouky - Colloids and Surfaces A …, 2023 - Elsevier
Abstract In this work, ZnSnO 3/ZnO/cellulose acetate nanocomposites have been efficiently
fabricated by simple wet chemical co-precipitation and drop casting techniques. The study …
fabricated by simple wet chemical co-precipitation and drop casting techniques. The study …
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices
As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of
connected devices, the need for processing large amounts of data in a fast and energy …
connected devices, the need for processing large amounts of data in a fast and energy …
Design and synthesis of low temperature printed metal oxide memristors
Resistive switching (RS) devices or memristors have received a lot of attention in the last
decade owing to their valuable and interesting properties, such as high-density, switching …
decade owing to their valuable and interesting properties, such as high-density, switching …
A fully inkjet-printed unipolar metal oxide memristor for nonvolatile memory in printed electronics
Memristors are an interesting novel class of devices for memory and beyond von Neumann
computing. Besides classical CMOS technology, memristors can also be manufactured by …
computing. Besides classical CMOS technology, memristors can also be manufactured by …
Inkjet-printed bipolar resistive switching device based on Ag/ZnO/Au structure
In this Letter, we report an inkjet-printed resistive switching device based on an Ag/ZnO/Au
structure. The device exhibits bipolar resistive switching behavior, a low operation voltage of …
structure. The device exhibits bipolar resistive switching behavior, a low operation voltage of …
Role of carbon nitride on the resistive switching behavior of a silver stannate based device: An approach to design a logic gate using the CMOS–memristor hybrid …
A simple wet chemical strategy was employed for the synthesis of 4-aminobenzoic acid
stabilized silver stannate nanoparticles with and without functionalization by carbon nitrides …
stabilized silver stannate nanoparticles with and without functionalization by carbon nitrides …
Bipolar resistive switching device based on N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/poly …
We propose a novel bilayer resistive switching device based on N, N′-bis (3-methylphenyl)-
N, N′-diphenylbenzidine (TPD) and poly (3, 4-ethylenedioxythiophene)-poly …
N, N′-diphenylbenzidine (TPD) and poly (3, 4-ethylenedioxythiophene)-poly …