The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

Self-organized InAs quantum dashes grown on In 0.53 Ga 0.23 Al 0.24 As∕ In P have been
investigated by chemically sensitive scanning transmission electron microscopy. The …

We present a detailed atomic-resolution study of morphology and substrate etching
mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor …

We show how the height dispersion of self-organized InAs/InP (001) quantum islands
emitting at 1.55 μm was reduced by optimizing the epitaxial growth parameters. Low height …

The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces
lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy …

Abstract Quantum Dots (QDs) are considered as an efficient building block of many
optoelectronic applications, such as semiconductor laser, photodetector, whereby their …

We have used low temperature photoluminescence and atomic force microscopy to study
the growth, by chemical beam epitaxy, of self-assembled InAs/InP quantum dots. By …

Transformation of self-assembled InAs quantum dots (QDs) on InP (100) into quantum rings
(QRs) is studied. In contrast to the typical approach to III− V semiconductor QR growth, the …

We investigated metal-organic vapor phase epitaxy grown droplet epitaxy (DE) and Stranski–
Krastanov (SK) InAs/InP quantum dots (QDs) by cross-sectional scanning tunneling …

We have studied the self-organized growth of InAs nanostructures in an InP matrix by gas-
source molecular-beam epitaxy on both nominally oriented and vicinal InP (001). Atomic …