Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

Series connection of individual semiconductors is an effective way to achieve higher voltage
switches. However, the inherent unequal dynamic voltage sharing problem needs to be …

High-voltage wide bandgap semiconductor devices such as the 15 kV SiC mosfet have
attracted great attention because of their potential applications in high-voltage and high …

Series connection of SiC power MOSFET is an attractive approach to expand the blocking
voltage of SiC devices, whereas the dynamic voltage balancing among the series …

Limited by low availability, high price, and poor switching performance of high-voltage
power devices, connecting low-voltage devices in series to block much higher voltages is …

In order to enable medium-voltage applications at an operation voltage of 5-kV level, a novel
7.2-kV/60-A Austin SuperMOS SiC power switch is developed. Static and dynamic …

Series connected SiC MOSFETs technology can apply low rated voltage power device to
medium or high voltage applications. However, voltage unbalance problem limits its …

The 10 kV-to-15 kV SiC MOSFET and 15-kV SiC IGBT are state-of-the-art high-voltage (HV)
devices designed by Cree Inc. These devices are expected to increase the power density of …

Power semiconductor switches are usually connected in series to achieve higher blocking
voltage. However, the series-operation of semiconductor devices is not easy due to unequal …