Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
Phase engineering and synchrotron-based study on two-dimensional energy nanomaterials
In recent years, there has been significant interest in the development of two-dimensional
(2D) nanomaterials with unique physicochemical properties for various energy applications …
(2D) nanomaterials with unique physicochemical properties for various energy applications …
Large perpendicular magnetic anisotropy at Fe/MgO interface
A large perpendicular magnetic anisotropy (PMA) of 1.4 MJ/m 3 was observed from ultrathin
Fe/MgO (001) bilayers grown on Cr-buffered MgO (001). The PMA strongly depends on the …
Fe/MgO (001) bilayers grown on Cr-buffered MgO (001). The PMA strongly depends on the …
Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices
Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …
considerable attention due to features such as nonvolatility, high scalability, low power, and …
Current-driven perpendicular magnetization switching in Ta/CoFeB/[TaOx or MgO/TaOx] films with lateral structural asymmetry
We study the current-driven perpendicular magnetization switching in Ta/CoFeB
(wedge)/[TaO x or MgO/TaO x] devices with a lateral structural asymmetry introduced by a …
(wedge)/[TaO x or MgO/TaO x] devices with a lateral structural asymmetry introduced by a …
Thickness-dependent magnetoelasticity and its effects on perpendicular magnetic anisotropy in Ta/CoFeB/MgO thin films
We report measurements of the in-plane magnetoelastic coupling in both as-deposited and
annealed ultrathin Ta/CoFeB/MgO layers as a function of uniaxial strain, conducted using a …
annealed ultrathin Ta/CoFeB/MgO layers as a function of uniaxial strain, conducted using a …
Modification of Dzyaloshinskii-Moriya-interaction-stabilized domain wall chirality by driving currents
We measure and analyze the chirality of Dzyaloshinskii-Moriya-interaction (DMI) stabilized
spin textures in multilayers of Ta| Co 20 F 60 B 20| MgO. The effective DMI is measured …
spin textures in multilayers of Ta| Co 20 F 60 B 20| MgO. The effective DMI is measured …
Tailoring the magnetic anisotropy of CoFeB/MgO stacks onto W with a Ta buffer layer
The emergence of perpendicular magnetic anisotropy (PMA) in CoFeB/MgO stacks
deposited on W using a Ta buffer layer is studied as a function of Ta and CoFeB layer …
deposited on W using a Ta buffer layer is studied as a function of Ta and CoFeB layer …
Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt-and Pd-free junctions
L Cuchet, B Rodmacq, S Auffret, RC Sousa… - Scientific reports, 2016 - nature.com
We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions
(p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom …
(p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom …
High thermal stability in W/MgO/CoFeB/W/CoFeB/W stacks via ultrathin W insertion with perpendicular magnetic anisotropy
Y Liu, T Yu, Z Zhu, H Zhong, KM Khamis… - Journal of Magnetism and …, 2016 - Elsevier
The perpendicular magnetic anisotropy (PMA) of a series of top MgO/CoFeB/W stacks were
studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was …
studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was …