The quest to use nonpolar surfaces of nitride materials and devices started a few years ago
with the aim to avoid the strong internal electric fields in active regions of optoelec‐tronic …

We report on the emission properties of nonpolar a-plane GaN layers grown on r-plane
sapphire. Temperature-, excitation-density-, and polarization-dependent …

In response to the current intensive scientific and commercial interest in nitride
semiconductors, several recent works have reviewed their material and physical properties …

The influence of high temperature AlN buffer layers on the morphology, structural and optical
characteristics of a-plane GaN grown by hydride vapour phase epitaxy on r-plane sapphire …

Non-polar a-plane GaN without triangular pits was grown on r-plane sapphire substrates
using metalorganic chemical vapor deposition (MOCVD) without a low-temperature GaN or …

Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by
ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous …

Schottky barrier height (SBH; Φ B) and their dependence on the work function of metals (Φ
M) at semipolar (11–22) p-GaN surfaces were investigated using Schottky diodes fabricated …

We have studied the optical emission properties of a-plane GaN layers grown on r-plane
sapphire by metalorganic chemical vapor deposition. Together with the typical band edge …

Si-doped a-plane GaN films with different doping concentrations were grown by metal-
organic vapor phase epitaxy. A mirrorlike surface without pits or anisotropic stripes was …

We report the structural and optical properties of a-plane GaN film grown on r-plane
sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray …