A physics-based model for the tunneling current of vertical tunneling field transistors (TFET)
is proposed. In part I, the expression of is derived from the multi-branch general solutions of …

Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold
degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in …

This paper presents an analytical modeling of the drain current for a Germanium source
vertical tunnel field effect transistor. Both one dimensional (1D) and two dimensional (2D) …

A physics-based model for the electric potential of vertical TFET is presented in this article.
The electric potential formula is derived for the first time from the multi-branch general …

A perforated plate in an electronic device is typically placed downstream of an axial fan
(push cooling) in order to avoid electromagnetic interferences. Because of the swirling …

Although the compact capacitance model of point tunneling types of tunneling field-effect
transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been …

In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was
investigated. The NFBFET has highly doped NP junction in the channel region. When drain …