We report on the ultraclean emission from single quantum dots embedded in pure wurtzite
nanowires. Using a two-step growth process combining selective-area and vapor–liquid …

Synthesis approaches to colloidal Cu3P nanocrystals (NCs) have been recently developed,
and their optical absorption features in the near-infrared (NIR) have been interpreted as …

We report on the recent progress in electronic applications using III–V nanowires (NWs) on
Si substrates using the selective-area growth method. This method could align vertical III–V …

Future development of quantum technologies is dependent upon physical implementation of
quantum systems. Photonic platforms have gained significant attention owing to the …

We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning
superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor …

We report the first comprehensive experimental and theoretical study of the optical
properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum …

The effect of ammonium polysulfide solution,(NH 4) 2 S x, on the surface passivation of p-
doped InP nanowires (NWs) was investigated by micro-photoluminescence. An …

Realizing single photon sources emitting in the telecom band on silicon substrates is
essential to reach complementary-metal–oxide–semiconductor (CMOS) compatible devices …

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III–V
materials on silicon. However, for III–V nanowires directly grown on silicon, dislocation-free …

Single photon sources operating on-demand at telecom wavelengths are required in fiber-
based quantum secure communication technologies. In this work, we demonstrate single …