High-K materials and metal gates for CMOS applications
J Robertson, RM Wallace - Materials Science and Engineering: R: Reports, 2015 - Elsevier
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
G Dingemans, WMM Kessels - … of Vacuum Science & Technology A, 2012 - pubs.aip.org
The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
Native point defects and dangling bonds in α-Al2O3
We performed hybrid functional calculations of native point defects and dangling bonds
(DBs) in α-Al 2 O 3 to aid in the identification of charge-trap and fixed-charge centers in Al 2 …
(DBs) in α-Al 2 O 3 to aid in the identification of charge-trap and fixed-charge centers in Al 2 …
On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes
DK Simon, PM Jordan, T Mikolajick… - ACS applied materials …, 2015 - ACS Publications
A controlled field-effect passivation by a well-defined density of fixed charges is crucial for
modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer …
modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer …
The origin of negative charging in amorphous Al2O3 films: the role of native defects
Amorphous aluminum oxide Al 2 O 3 (a-Al 2 O 3) layers grown by various deposition
techniques contain a significant density of negative charges. In spite of several experimental …
techniques contain a significant density of negative charges. In spite of several experimental …
Controlling the fixed charge and passivation properties of Si (100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
G Dingemans, NM Terlinden, MA Verheijen… - Journal of Applied …, 2011 - pubs.aip.org
Al 2 O 3 synthesized by atomic layer deposition (ALD) on H-terminated Si (100) exhibits a
very thin (∼ 1 nm) interfacial SiO x layer. At this interface, a high fixed negative charge …
very thin (∼ 1 nm) interfacial SiO x layer. At this interface, a high fixed negative charge …
Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide …
Bulk trapping and its effects on threshold voltage hysteresis (ΔV TH) in Al 2 O 3/AlGaN/GaN
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …
Border traps and bias-temperature instabilities in MOS devices
DM Fleetwood - Microelectronics Reliability, 2018 - Elsevier
An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
Surface passivation of Cu (In, Ga) Se2 using atomic layer deposited Al2O3
WW Hsu, JY Chen, TH Cheng, SC Lu, WS Ho… - Applied Physics …, 2012 - pubs.aip.org
With Al 2 O 3 passivation on the surface of Cu (In, Ga) Se 2, the integrated
photoluminescence intensity can achieve two orders of magnitude enhancement due to the …
photoluminescence intensity can achieve two orders of magnitude enhancement due to the …