[图书][B] Photochemical vapor deposition
JG Eden - 1991 - books.google.com
Although the deposition of films by gas phase photochemical reactions was first reported in
the scientific literature more than 50 years ago [1, 2], only since the late 1970s has the …
the scientific literature more than 50 years ago [1, 2], only since the late 1970s has the …
Substrate orientation effects in CdxHg1− xTe grown by MOVPE
P Capper, CD Maxey, PAC Whiffin, BC Easton - Journal of crystal growth, 1989 - Elsevier
Abstract Layers of Cd x Hg 1− x Te (CMT) have been grown by thermal metalorganic vapour
phase epitaxy (MOVPE) at temperatures between 420 and 350° C on CdTe substrates of …
phase epitaxy (MOVPE) at temperatures between 420 and 350° C on CdTe substrates of …
OMVPE growth of CdTe-ZnTe superlattices
DW Kisker, PH Fuoss, JJ Krajewski… - Journal of Crystal …, 1988 - Elsevier
Superlattices consisting of CdTe and ZnTe have been grown using atmospheric pressure
OMVPE. Structural characterization by X-ray diffraction and transmission electron …
OMVPE. Structural characterization by X-ray diffraction and transmission electron …
Microstructural studies of epitaxial Ge films grown on [100] GaAs by laser photochemical vapor deposition
CJ Kiely, V Tavitian, JG Eden - Journal of applied physics, 1989 - pubs.aip.org
Ge films grown on [100] GaAs by laser photochemical vapor deposition (LPVD) in parallel
geometry at temperatures (T s) ranging from∼ 240 to 415° C have been examined by …
geometry at temperatures (T s) ranging from∼ 240 to 415° C have been examined by …
Extrinsic doping of CdxHg1− xTe—A review
P Capper - Progress in crystal growth and characterization, 1989 - Elsevier
Extrinsic doping by elements which are stable to subsequent processing will become
increasingly important in future infra-red device structures based on Cd x Hg 1− x Te. This …
increasingly important in future infra-red device structures based on Cd x Hg 1− x Te. This …
Metalorganic vapour phase epitaxy of mercury cadmium telluride
JB Mullin, SJC Irvine - Progress in crystal growth and characterization of …, 1994 - Elsevier
The present review covers the fundamental factors involved in the the metalorganic vapour
phase epitaxy of mercury cadmium telluride. In addition recent significant developments …
phase epitaxy of mercury cadmium telluride. In addition recent significant developments …
OMVPE of compound semiconductors
TF Kuech, KF Jensen - Thin Film Processes, 1991 - books.google.com
OMVPE of compound semiconductors Page 384 THIN FILM PROCESSES ll Ill-2 OMVPE of
Compound Semiconductors Thomas F. Kuech University of Wisconsin Department of Chemical …
Compound Semiconductors Thomas F. Kuech University of Wisconsin Department of Chemical …
A model for the growth of cdte by metal organic chemical vapor deposition
Y Nemirovsky, D Goren, A Ruzin - Journal of electronic materials, 1991 - Springer
A kinetic model for the metalorganic chemical vapor deposition (MOCVD) growth of CdTe
over a wide temperature range is presented. The model yields the growth rate as a function …
over a wide temperature range is presented. The model yields the growth rate as a function …
Chalcogenide topological insulators
JA Hagmann - Chalcogenide, 2020 - Elsevier
The purpose of this chapter is to introduce the reader to the chalcogenide materials systems
that host the topological insulator phase of quantum matter. Specifically, the HgTe quantum …
that host the topological insulator phase of quantum matter. Specifically, the HgTe quantum …
MOCVD growth of CdTe and CdHgTe at 350° C using a new cadmium source
LM Smith, J Thompson, AC Jones, PR Jacobs - Materials Letters, 1988 - Elsevier
Diethylcadmium has been used as a new cadmium precursor for the growth of CdTe and
CdHgTe at 350° C by MOCVD (IMP). The layers were p-type at 20 K; a 3 μm thick Cd 0.228 …
CdHgTe at 350° C by MOCVD (IMP). The layers were p-type at 20 K; a 3 μm thick Cd 0.228 …