We report on the current properties of Al 1− x In x N (x≈ 0.18) layers lattice-matched (LM) to
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green
bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including …

This study have outlined numerical investigation of V shaped three element resonator. The
stability parameter is measured against back mirror curvature radius, back mirror phase …

This study has outlined the simulative study of simple ring resonator based Brewster plate in
the air. The obtained results are achieved with the variations of space length, curvature …

The work has outlined the Fabry Perot laser properties with high pump lasers for upgrading
fiber optic transceiver systems. The physical structures of the light source are taken into …

This study has outlined the Z resonator shaped with Brewster crystal in the presence of flat
mirror for measuring the standing wave ratio. Stability parameter and beam radius are …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

This study has demonstrated and simulated the data rates transmission, performance speed
and figure of merit estimation and rise time control for various quadurature light sources …

The book" Nitride Semiconductor Technology" provides an overview of nitride
semiconductors and their uses in optoelectronics and power electronics devices. It explains …

We report the fabrication of m-plane nanoporous distributed Bragg reflectors (DBRs) on free-
standing GaN substrates. The DBRs consist of 15 pairs of alternating undoped and highly …