[HTML][HTML] Atomic layer deposition of doped ZnO films
Z Gao, P Banerjee - Journal of Vacuum Science & Technology A, 2019 - pubs.aip.org
This article reviews the process-structure-property relationship in doped ZnO thin films via
atomic layer deposition (ALD). ALD is an important manufacturing-scalable, layer-by-layer …
atomic layer deposition (ALD). ALD is an important manufacturing-scalable, layer-by-layer …
Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
Spectrum projection with a bandgap-gradient perovskite cell for colour perception
MN Zhang, X Wu, A Riaud, XL Wang, F Xie… - Light: Science & …, 2020 - nature.com
Optoelectronic devices for light or spectral signal detection are desired for use in a wide
range of applications, including sensing, imaging, optical communications, and in situ …
range of applications, including sensing, imaging, optical communications, and in situ …
Spatial atomic layer deposition of nitrogen-doped alumina thin films for high-performance perovskite solar cell encapsulation
An atmospheric-pressure spatial atomic layer deposition (AP-SALD) system is used to
deposit nitrogen-doped alumina (N-AlO x) thin-film-encapsulation layers. The rapid nature of …
deposit nitrogen-doped alumina (N-AlO x) thin-film-encapsulation layers. The rapid nature of …
Trends in performance characteristics and modelling of oxide based TFT
K Mukhopadhyaya, P Srividya - Materials Today: Proceedings, 2022 - Elsevier
Abstract This paper reviews Thin Film Transistors (TFTs) and its performance characteristics.
Specific focus has been given on the performance characteristics of oxide based TFT …
Specific focus has been given on the performance characteristics of oxide based TFT …
High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric
J Yang, Y Zhang, Q Wu, C Dussarrat… - … on Electron Devices, 2019 - ieeexplore.ieee.org
The high-performance ZnO thin-film transistors (TFTs) were fabricated on indium tin oxide
glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate …
glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate …
Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb (NMe2)
3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can …
3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can …
Low-temperature combustion synthesis and UV treatment processed p-type Li: NiO x active semiconductors for high-performance electronics
Solution-processed thin film transistors (TFTs) in the next generation of large-area flexible
electrics not only need oxide semiconductors with high performance but also require them …
electrics not only need oxide semiconductors with high performance but also require them …
Enhanced stability in Zr-doped ZnO TFTs with minor influence on mobility by atomic layer deposition
We developed a novel method to fabricate Zr-doped ZnO (ZrZnO) thin films via low-
temperature atomic layer deposition technique. ZrZnO films were deposited by diethylzinc …
temperature atomic layer deposition technique. ZrZnO films were deposited by diethylzinc …
Solution-processed yttrium-doped IZTO semiconductors for high-stability thin film transistor applications
In this article, solution-processed zinc-tin-oxide (ZTO), indium-zinc-tin-oxide (IZTO), and
yttrium-doped indium-zinc-tin-oxide (IZTO: Y) thin film transistors (TFTs) were investigated …
yttrium-doped indium-zinc-tin-oxide (IZTO: Y) thin film transistors (TFTs) were investigated …