Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …

While high temperature annealing has been proven to be an effective strategy to reduce
threading dislocation density of AlN film, the point defect induced near-ultraviolet emission …

A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted
GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an …

Degradation mechanisms of 275-nm-band Al x Ga 1-x N multiple quantum well deep-
ultraviolet light-emitting diodes fabricated on a (0001) sapphire substrate were investigated …

We carried out atomic-scale observations of Mg-ion-implanted GaN by transmission electron
microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic …

Herein, the annealing behaviors of defects in ion‐implanted GaN are studied by positron
annihilation, cathodoluminescence, scanning transmission electron microscopy, and atom …

To accelerate the development of GaN power devices, reproducible fabrication of p-type
GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area doping is …

We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during
metalorganic chemical vapor deposition through sequential short-duration gyrotron …

Three topical materials systems are discussed from the point of view of point defect
characterization with positron annihilation spectroscopy. The family of III‐nitride …

METHODS Mg ion-implantation was carried out in 4 μm-thick not intentionally doped GaN
epitaxial layers grown by MOCVD on free standing GaN substrates oriented along the c …