Modeling electronic and optical properties of III–V quantum dots—selected recent developments
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …
Telecom wavelength single photon sources
Single photon sources are key components for quantum technologies such as quantum
communication, computing and metrology. A key challenge towards the realization of global …
communication, computing and metrology. A key challenge towards the realization of global …
Electronic states of (InGa)(AsSb)/GaAs/gap quantum dots
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum
dots are presented. This system is unique since it exhibits concurrently direct and indirect …
dots are presented. This system is unique since it exhibits concurrently direct and indirect …
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots
We study in detail self-assembled (In, Ga) As quantum dots grown on GaP substrate from the
structural, theoretical, and optical points of view. Single quantum dot morphology is first …
structural, theoretical, and optical points of view. Single quantum dot morphology is first …
Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering
We have investigated quantitatively anti-phase domains (APD) structural properties in 20nm
GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive …
GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive …
InGaAs/GaP quantum dot light-emitting diodes on Si
Y Song, M Larry Lee - Applied Physics Letters, 2013 - pubs.aip.org
We report on the growth, structure, and luminescence of In 0.5 Ga 0.5 As/GaP self-
assembled quantum dots (SAQDs) on exact Si (001) by means of an epitaxial GaP/Si …
assembled quantum dots (SAQDs) on exact Si (001) by means of an epitaxial GaP/Si …
Growth of In0. 25Ga0. 75As quantum dots on GaP utilizing a GaAs interlayer
G Stracke, A Glacki, T Nowozin, L Bonato… - Applied Physics …, 2012 - pubs.aip.org
Coherent In 0.25 Ga 0.75 As quantum dots (QDs) are realized on GaP (001) substrates by
metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a thin GaAs …
metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a thin GaAs …
Electronic wave functions and optical transitions in (In, Ga) As/GaP quantum dots
We study the complex electronic band structure of low In content InGaAs/GaP quantum dots.
A supercell extended-basis tight-binding model is used to simulate the electronic and the …
A supercell extended-basis tight-binding model is used to simulate the electronic and the …
Advancements and challenges in plasmon-exciton quantum emitters based on colloidal quantum dots and perovskite nanocrystals
A Olejniczak, Y Rakovich… - Materials for Quantum …, 2024 - iopscience.iop.org
Abstract The Nobel Prizes in Physics (2022) and Chemistry (2023) heralded the recognition
of quantum information science and the synthesis of quantum dots, respectively. This …
of quantum information science and the synthesis of quantum dots, respectively. This …
Spatial structure of In0. 25Ga0. 75As/GaAs/GaP quantum dots on the atomic scale
C Prohl, A Lenz, D Roy, J Schuppang… - Applied Physics …, 2013 - pubs.aip.org
In 0.25 Ga 0.75 As/GaAs quantum dots grown by metalorganic vapor-phase epitaxy in a
GaP matrix have been investigated on the atomic scale using cross-sectional scanning …
GaP matrix have been investigated on the atomic scale using cross-sectional scanning …