In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching
Porous silicon PSi has been extensively studied in the last decade since the report of visible
luminescence properties in 19901 after the work of Uhlir2 and Turner. 3 The current interest …
luminescence properties in 19901 after the work of Uhlir2 and Turner. 3 The current interest …
[图书][B] Nanostructured thin films and coatings: mechanical properties
S Zhang - 2010 - taylorfrancis.com
Authored by leading experts from around the world, the three-volume Handbook of
Nanostructured Thin Films and Coatings gives scientific researchers and product engineers …
Nanostructured Thin Films and Coatings gives scientific researchers and product engineers …
Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix
LY Chen, WH Chen, FCN Hong - Applied Physics Letters, 2005 - pubs.aip.org
Visible electroluminescence from silicon nanocrystals (Si-NCs) embedded in amorphous
silicon nitride (a‐Si N x) films has been observed. The Si‐NC∕ a‐Si N x films were …
silicon nitride (a‐Si N x) films has been observed. The Si‐NC∕ a‐Si N x films were …
Shape-related optical and catalytic properties of wurtzite-type CoO nanoplates and nanorods
In this paper, we report the anisotropic optical and catalytic properties of wurtzite-type
hexagonal CoO (h-CoO) nanocrystals, an unusual nanosized indirect semiconductor …
hexagonal CoO (h-CoO) nanocrystals, an unusual nanosized indirect semiconductor …
White electroluminescence from hydrogenated amorphous- thin films
Z Pei, YR Chang, HL Hwang - Applied physics letters, 2002 - pubs.aip.org
White electroluminescence (EL) was observed from hydrogenated amorphous-SiN x-based
light-emitting device. Silicon nitride thin films were deposited on the indium-tin-oxide (ITO) …
light-emitting device. Silicon nitride thin films were deposited on the indium-tin-oxide (ITO) …
Synthesis of silicon quantum dot buried SiOx films with controlled luminescent properties for solid-state lighting
ZT Kang, B Arnold, CJ Summers, BK Wagner - Nanotechnology, 2006 - iopscience.iop.org
Highly luminescent Si quantum dot embedded SiO x films were studied as down-converting
emitters for solid-state lighting applications. Strong red photoluminescence was observed …
emitters for solid-state lighting applications. Strong red photoluminescence was observed …
Formation of silicon nano-dots in luminescent silicon nitride
Z Pei, HL Hwang - Applied surface science, 2003 - Elsevier
Strong room-temperature photoluminescence (PL) was observed in the hydrogenated
silicon-rich silicon nitride (a-SiNx: H) thin films grown by plasma-enhanced chemical vapor …
silicon-rich silicon nitride (a-SiNx: H) thin films grown by plasma-enhanced chemical vapor …
Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation
Si nanocrystals (nc-Si) with different sizes embedded in Si O 2 matrix have been
synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on …
synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on …
Ultraviolet and blue photoluminescence from sputter deposited Ge nanocrystals embedded in SiO2 matrix
Ge nanocrystals (NCs) embedded in silicon dioxide (SiO 2) matrix are grown by radio-
frequency magnetron sputtering and studied in order to understand the origin of ultraviolet …
frequency magnetron sputtering and studied in order to understand the origin of ultraviolet …
Intense ultraviolet-blue photoluminescence from SiO2 embedded Ge nanocrystals prepared by different techniques
PK Giri, S Bhattacharyya… - … of Nanoscience and …, 2009 - ingentaconnect.com
We have made systematic studies on the ultraviolet-blue photoluminescence (PL) from Ge
nanocrystals (NCs) grown embedded in SiO2 matrix. Embedded Ge NCs are grown by two …
nanocrystals (NCs) grown embedded in SiO2 matrix. Embedded Ge NCs are grown by two …