Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison
In this article, the performance of 3-D nanosheet FET (NS-FET) in inversion (INV) and
junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In …
junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In …
Gate-all-around nanowire junctionless transistor-based hydrogen gas sensor
This paper reports on the detection of hydrogen (H 2) gas by utilizing a gate-all-around
nanowire (NW) junctionless (JL) transistor as a sensor. The effects of temperature and …
nanowire (NW) junctionless (JL) transistor as a sensor. The effects of temperature and …
Nanoscale thermal transport in vertical gate-all-around junctionless nanowire transistors—Part I: Experimental methods
C Mukherjee, H Rezgui, Y Wang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, we present the first detailed experimental study of electrothermal effects in 3-D
vertical gate-all-around (GAA) junctionless nanowire transistors (JLNTs). In contrast with …
vertical gate-all-around (GAA) junctionless nanowire transistors (JLNTs). In contrast with …
Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors
J Qi, K Tie, Y Ma, Y Huang, W Gong, S Sun… - Advanced …, 2024 - Wiley Online Library
Organic field‐effect transistors (OFETs) have broad prospects in biomedical, sensor, and
aerospace applications. However, obtaining temperature‐immune OFETs is difficult …
aerospace applications. However, obtaining temperature‐immune OFETs is difficult …
A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors
This work proposes a physically-based definition for the threshold voltage, V TH, of
junctionless nanowire transistors and a methodology to extract it. The V TH is defined as the …
junctionless nanowire transistors and a methodology to extract it. The V TH is defined as the …
Revisiting the doping requirement for low power junctionless MOSFETs
MS Parihar, A Kranti - Semiconductor Science and Technology, 2014 - iopscience.iop.org
In this work, we revisit the requirement of higher channel doping (≥ 10 19 cm− 3) in
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …
Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors
Understanding trap dynamics and formation of localized temperature hot-spots due to self-
heating is crucial for the design optimization of emerging vertical junctionless nanowire …
heating is crucial for the design optimization of emerging vertical junctionless nanowire …
Substrate bias influence on the operation of junctionless nanowire transistors
The aim of this paper is to analyze the substrate bias influence on the operation of
junctionless nanowire transistors based on 3-D simulated and experimental results …
junctionless nanowire transistors based on 3-D simulated and experimental results …
A junctionless silicon carbide transistor for harsh environment applications
Silicon carbide (SiC) is the material of choice for high-temperature, high-voltage, and other
harsh environment applications in high-energy physics, outer space, etc., because of its high …
harsh environment applications in high-energy physics, outer space, etc., because of its high …
Analysis of the electrical parameters of SOI junctionless nanowire transistors at high temperatures
TA Ribeiro, S Barraud… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
This work studies the effects of the temperature variation, from 300K to 500K, on the
electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The …
electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The …