The current status of ion beam processing of GaN is reviewed. In particular, we discuss the
following aspects of ion implantation into GaN:(i) damage build-up and amorphization,(ii) …

The solid phase crystallization of chemical vapor deposited amorphous silicon films onto
oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at …

Polymorphs are common in nature and can be stabilized by applying external pressure in
materials. The pressure and strain can also be induced by the gradually accumulated …

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

Excitonic mechanisms of defect formation and of sputtering from surfaces, induced as a
consequence of exciton relaxation, are effective in a limited class of wide-gap materials …

Plasma-induced defects are often recognized in state-of-the-art semiconductors, high-
efficiency solar cells and high-sensitivity image sensors. These defects are in the form of a …

Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of …

An energetic electron beam has been used to stimulate crystallization of spatially isolated
amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was …

The effects of hydrostatic pressure on the solid-phase epitaxial growth (SPEG) rate u of
intrinsic Ge (100) and undoped and doped Si (100) into their respective self-implanted …

Amorphization of 6H-SiC with 260;'keV Ge+ ions at room temperature and subsequent ion-
beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ions at 480 “C have been …