Compact thermal models of semiconductor devices: A Review
In the paper the problem of modelling thermal properties of semiconductor devices with the
use of compact models is presented. This class of models is defined and their development …
use of compact models is presented. This class of models is defined and their development …
Modeling of wide bandgap power semiconductor devices—Part I
HA Mantooth, K Peng, E Santi… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Wide bandgap power devices have emerged as an often superior alternative power switch
technology for many power electronic applications. These devices theoretically have …
technology for many power electronic applications. These devices theoretically have …
Online thermal resistance and reliability characteristic monitoring of power modules with Ag sinter joining and Pb, Pb-free solders during power cycling test by SiC …
Despite the rapid progression of silicon carbide (SiC) power devices, the thermal
characteristic evaluation during power cycling at high temperature (> 200° C) is an issue. In …
characteristic evaluation during power cycling at high temperature (> 200° C) is an issue. In …
Nonlinear compact thermal model of the IGBT dedicated to SPICE
In this article, the problem of modeling the thermal properties of the IGBT using a nonlinear
compact thermal model is considered. This model has the form of an electrical network. In …
compact thermal model is considered. This model has the form of an electrical network. In …
Measurements of parameters of the thermal model of the IGBT module
In this paper, the problem of how to describe the thermal properties of the insulated-gate
bipolar transistor (IGBT) module with the use of the compact thermal model is considered …
bipolar transistor (IGBT) module with the use of the compact thermal model is considered …
New dynamic electro-thermo-optical model of power LEDs
In this paper a new SPICE-compatible model of power LED is proposed. This model takes
into account electric, optical and thermal phenomena. It makes it possible to calculate dc …
into account electric, optical and thermal phenomena. It makes it possible to calculate dc …
Electrothermal Averaged Model of a Diode–IGBT Switch for a Fast Analysis of DC–DC Converters
P Górecki - IEEE Transactions on Power Electronics, 2022 - ieeexplore.ieee.org
In this article, an electrothermal model of a diode–insulated gate bipolar transistor switch for
modeling dc–dc converters is proposed. The formulated model has the form of a subcircuit …
modeling dc–dc converters is proposed. The formulated model has the form of a subcircuit …
Application of average electrothermal models in the SPICE-aided analysis of boost converters
This paper presents a new average electrothermal model of the inductor dedicated to the
computer analysis of dc-dc converters, such as a boost converter. The proposed model …
computer analysis of dc-dc converters, such as a boost converter. The proposed model …
[HTML][HTML] Modeling the Influence of Thermal Phenomena in Inductors and Capacitors on the Characteristics of the SEPIC Converter
The paper presents the results of measurements and calculations of the SEPIC converter
characteristics, taking into account thermal phenomena in semiconductor devices and …
characteristics, taking into account thermal phenomena in semiconductor devices and …
SPICE-aided nonlinear electrothermal modeling of an IGBT module
The paper proposes a compact electrothermal model of the IGBT module in the form of a
subcircuit for SPICE. This model simultaneously takes into account electrical phenomena …
subcircuit for SPICE. This model simultaneously takes into account electrical phenomena …