CdTe is one of the most promising materials for thin-film solar cells. However, further
improvement of its performance is hindered by its relatively short minority-carrier lifetime …

We report steady-state and time-resolved photoluminescence (TRPL) measurements on
individual GaN nanowires (⁠ 6–20 μ m in length, 30–940 nm in diameter) grown by a …

Carrier dynamics in hydride vapor phase epitaxy grown bulk GaN with very low density of
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …

Accurately measuring the bulk minority carrier lifetime is one of the greatest challenges in
evaluating photoactive materials used in photovoltaic cells. One-photon time-resolved …

Applications of lead halide perovskites in solar cells and photo-and ionising radiation
detectors are based on effective charge carrier generation and transport. The perovskites …

N-type GaN epitaxial layers grown via metal organic vapor-phase epitaxy typically exhibit a
yellow luminescence (YL) band owing to carbon-related deep levels in the …

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial
CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and …

Lateral ambipolar diffusion in an InGaN/GaN single quantum well (SQW) structure grown on
bulk GaN is studied by microphotoluminescence (μPL) investigations. The analysis is done …

Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN
quantum wells. A mere optical setup with high spatial resolution was established on the …

Femtosecond transient absorption (TA) as a probe of ultrafast carrier dynamics was
conducted at near-infrared wavelengths in a series of GaN crystals. The TA kinetics in all the …