The feasibility of using sub-50-nm dual-gate thin-film transistors (TFTs) for monolithic 3-D
integrated flash memories is shown. Silicon-based TFTs with the smallest length and width …

For many years, the semi-classical Boltzmann approach to transport in semiconductors has
been very successful in interpreting the physics of electron devices, in a fast evolving …

Lateral size effects on surface-roughness-limited mobility in silicon-nanowire FETs are
analyzed by means of a full-quantum 3-D self-consistent simulation. A statistical analysis is …

A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-
length modulation and drain-induced barrier lowering are modeled by using an approximate …

The Wigner function formalism has been introduced with an emphasis on basic theoretical
aspects, and recently developed numerical approaches and applications for modeling and …

As devices continue scaling down into nanometer regime, carrier transport becomes
critically important. In this paper, experimental studies on the carrier transport in gate-all …

This paper proposes a semianalytical model to estimate short-channel effects for
independent gate operation in double-gate (DG) junctionless (JL) MOSFET incorporating …

Using a new extraction methodology taking into account multisubband population and
carrier degeneracy, we have experimentally determined backscattering coefficients, ballistic …

The concept of mobility, resulting from an analysis of stationary transport where carrier
velocity is limited by scattering phenomena, has been widely used till today in …

We present modeling and simulation of a cylindrical surrounding double-gate (CSDG) metal–
oxide–semiconductor field-effect transistor (MOSFET) with vacuum gate dielectric instead of …