Carrier transport across PtSe2/n-type GaN heterojunction
V Janardhanam, JH Kim, I Jyothi, MS Kang, SK Lee… - Vacuum, 2023 - Elsevier
We fabricated PtSe 2/n-type GaN heterojunction diode by transferring a large-scale grown
two-dimensional (2D) PtSe 2 layered film onto a 3D GaN substrate. The PtSe 2 film …
two-dimensional (2D) PtSe 2 layered film onto a 3D GaN substrate. The PtSe 2 film …
Progress in violet light-emitting diodes based on ZnO/GaN heterojunction
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into
several obstacles during the last twenty years. While both the energy bandgap and lattice …
several obstacles during the last twenty years. While both the energy bandgap and lattice …
Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode
KR Peta, MD Kim - Superlattices and Microstructures, 2018 - Elsevier
The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is
studied using temperature dependent current-voltage (IVT) and capacitance-voltage (CV) …
studied using temperature dependent current-voltage (IVT) and capacitance-voltage (CV) …
High-performance GaN vertical Schottky barrier diode with self-alignment trench structure
J Liu, C Han, M Yang, W Liu, L Geng… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully
fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and …
fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and …
Electrical properties of nanoscale pn heterojunctions formed between a single ZnO nanorod and GaN substrate
S Tiagulskyi, R Yatskiv, H Faitova, Š Kučerová… - Materials Science in …, 2020 - Elsevier
We study electronic transport in single vertically oriented n-type ZnO nanorods on p-type
GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods …
GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods …
Growth and Fabrication of Reliable n-ZnO/p-GaN Heterojunction Light-Emitting Diodes
A reliablen n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs) were fabricated based
on the systematicn n-ZnO growth and post-thermal annealing optimization. Then n-ZnO films …
on the systematicn n-ZnO growth and post-thermal annealing optimization. Then n-ZnO films …
ZnO-based LEDs
H Long - Handbook of Solid-State Lighting and LEDs, 2017 - taylorfrancis.com
Zinc oxide (ZnO) is one of the II–VI semiconductor materials with a wide direct bandgap of
3.37 eV and a large exciton binding energy of 60 mV. In addition, ZnO is environmentally …
3.37 eV and a large exciton binding energy of 60 mV. In addition, ZnO is environmentally …