[图书][B] Quantum Confined Laser Devices: Optical gain and recombination in semiconductors
P Blood - 2015 - books.google.com
The semiconductor laser, invented over 50 years ago, has had an enormous impact on the
digital technologies that now dominate so many applications in business, commerce and the …
digital technologies that now dominate so many applications in business, commerce and the …
Optical gain and lasing properties of InP/AlGaInP quantum-dot laser diode emitting at 660 nm
We investigated the optical gain properties and lasing characteristics of a pulsed electrically
pumped laser structure, which consists of a single layer of self-assembled InP quantum dots …
pumped laser structure, which consists of a single layer of self-assembled InP quantum dots …
Low temperature Fermi-Dirac distribution in InAsP quantum dot lasers
IB Karomi - Optical Materials, 2021 - Elsevier
We examine the probability of carriers in a 770 nm InAsP quantum dot (QD) laser by
analyzing Fermi-Dirac distribution using the segmented contact method. This study …
analyzing Fermi-Dirac distribution using the segmented contact method. This study …
Experimental investigation of stripe cavity length effect on threshold current density for InP/AlGaInP QD laser diode
FA Al-Marhaby, MS Al-Ghamdi - Optical Materials, 2022 - Elsevier
InP/AlGaInP QD laser diodes with various cavity lengths grown on GaAs substrate were
synthesized by (MOVPE) technique. LI characteristics at various temperatures (190–390K) …
synthesized by (MOVPE) technique. LI characteristics at various temperatures (190–390K) …
Effect of temperature on the electrical parameters of indium phosphide/aluminum gallium indium phosphide (InP/AlGaInP) quantum dot laser diode with different cavity …
The IV characteristics of InP/AlGaInP quantum dot laser diodes with different cavity lengths
were measured at different temperatures (77–400K). From the forward bias IV …
were measured at different temperatures (77–400K). From the forward bias IV …
Modeling of Relative Intensity Noise in QD-VCSEL
In this paper, the dynamics and statics properties of a 1.3 μm InAs/InGaAs Quantum-Dot
(QD) vertical-cavity surface-emitting laser (VCSEL) have been investigated using a self …
(QD) vertical-cavity surface-emitting laser (VCSEL) have been investigated using a self …
InP quantum dot lasers with temperature insensitive operating wavelength
S Shutts, PM Smowton, AB Krysa - Applied Physics Letters, 2013 - pubs.aip.org
We quantify the mechanisms that govern the lasing wavelength in edge-emitting
InP/AlGaInP quantum dot (QD) lasers, by characterising the constituent factors controlling …
InP/AlGaInP quantum dot (QD) lasers, by characterising the constituent factors controlling …
The effect of strained confinement layers in InP self-assembled quantum dot material
We investigated a series of self-assembled InP quantum dot structures. The Ga
concentrations of the Ga x In (1− x) P upper confining quantum well layers were varied from …
concentrations of the Ga x In (1− x) P upper confining quantum well layers were varied from …
Reducing thermal carrier spreading in InP quantum dot lasers
M Kasim, SN Elliott, AB Krysa… - IEEE Journal of …, 2015 - ieeexplore.ieee.org
Record low values in this material system of threshold current density, particularly at
elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga 0.58 In 0.42 …
elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga 0.58 In 0.42 …
Theoretical analysis of relative intensity noise in semiconductor QD lasers
In this study, the relative intensity noise (RIN) and modulation response of a 1.3 μm
InAs/InGaAs quantum dot (QD) laser are investigated using a rate equation model in the …
InAs/InGaAs quantum dot (QD) laser are investigated using a rate equation model in the …