Advanced semiconductor devices often utilize structural and geometrical effects to tailor their
characteristics and improve their performance. We report here detailed understanding of …

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-
assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing …

We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN)
nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self …

In this study, a polished plateau-patterned sapphire substrate (PP-PSS) was developed to
grow epitaxial GaN microrods using an AlN buffer layer via pulsed metal–organic chemical …

We demonstrate the epitaxial growth of three-dimensional (3D) GaN single crystal arrays
through metal–organic vapor phase epitaxy (MOVPE) on lattice-matched ZnO templates that …

In various researches, the effect of different types of semiconductor materials on the
performance of light diodes has been investigated. Gallium arsenide and aluminum gallium …

Optical detection of pressure has the advantage of direct and dynamic indication of the
pressure distribution with a high spatial resolution. In this study, microcrystal (μ-crystal) light …

There is provided a semiconductor light-emitting device including a base layer formed of a
first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures …

Colour-temperature (Tc) is a crucial specification of white light-emitting diodes (WLEDs)
used in a variety of smart-lighting applications. Commonly, Tc is controlled by distributing …

Controlling the site, size, and shape of group III‐nitride quantum dots (QDs) is critical for the
development of mass‐producible single‐photon sources for scalable quantum technologies …