Material processing, performance and reliability of MoS2 field effect transistor (FET) technology-A critical review

R Mathew, J Ajayan - Materials Science in Semiconductor Processing, 2023 - Elsevier
In last the decade, Molybdenum-di-sulphide (MoS 2) based field effect transistors (FETs)
combined with the advancements in integrated circuit (IC) technology have found versatile …

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors

LR Thoutam, R Mathew, J Ajayan, S Tayal… - …, 2023 - iopscience.iop.org
The voyage of semiconductor industry to decrease the size of transistors to achieve superior
device performance seems to near its physical dimensional limitations. The quest is on to …

Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts

Z Cheng, Y Yu, S Singh, K Price, SG Noyce, YC Lin… - Nano …, 2019 - ACS Publications
Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm
transistor channels due to their ultrathin body thickness, which results in strong electrostatic …

Are 2D interfaces really flat?

Z Cheng, H Zhang, ST Le, H Abuzaid, G Li, L Cao… - ACS …, 2022 - ACS Publications
Two-dimensional (2D) van der Waals materials are subject to mechanical deformation and
thus forming bubbles and wrinkles during exfoliation and transfer. A lack of interfacial …

Tuning supercurrent in Josephson field-effect transistors using h-BN dielectric

F Barati, JP Thompson, MC Dartiailh, K Sardashti… - Nano Letters, 2021 - ACS Publications
Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring
mesoscopic and topological superconductivity. A unique property of Josephson junction …

Interplay between Thermal Stress and Interface Binding on Fracture of WS2 Monolayer with Triangular Voids

D Verma, P Kumar, S Mukherjee… - … Applied Materials & …, 2022 - ACS Publications
The defect engineering of two-dimensional (2D) materials has become a pivotal strategy for
tuning the electrical and optical properties of the material. However, the reliable application …

Mechanisms of Interface Cleaning in Heterostructures Made from Polymer‐Contaminated Graphene

Z Huang, E Cuniberto, S Park, K Kisslinger, Q Wu… - Small, 2022 - Wiley Online Library
Heterostructures obtained from layered assembly of 2D materials such as graphene and
hexagonal boron nitride have potential in the development of new electronic devices …

Z-scheme electron transfer mechanism of MoS2/CoP heterostructure for simulated solar light induced hydrogen production

CH Zhao, KL Luo, W Li - Colloids and Surfaces A: Physicochemical and …, 2023 - Elsevier
Photocatalytic hydrogen production is a potential strategy to convert solar energy into
chemical energy. Molybdenum disulfide (MoS 2) semiconductor has been broadly used to …

Efficient passivation of monolayer MoS2 by epitaxially grown 2D organic crystals

X Xu, Z Chen, B Sun, Y Zhao, L Tao, JB Xu - Science Bulletin, 2019 - Elsevier
Monolayer molybdenum disulfide (MoS 2) is considered to be a promising candidate for field-
effect transistors and photodetectors due to its direct bandgap and atomically thin properties …

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

A Mazzoni, R Burke, M Chin, S Najmaei… - Journal of Applied …, 2022 - pubs.aip.org
Understanding and improving the contact resistance of two-dimensional materials for the
fabrication of next-generation devices is of vital importance to be able to fully utilize the new …