The influence of anisotropic strain on the valence band structure and related properties,
including excitonic transition energies, transition polarization selection rules, band-edge …

We report the structural and optical properties of a-plane GaN film grown on r-plane
sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray …

Nonpolar gallium nitride (GaN) epitaxial film was grown on a nearly lattice-matched (100) γ-
LiAlO2 substrate by a versatile chemical vapor deposition (CVD) method. LiAlO2 single …

Nonpolar GaN crystal on lattice-matched [100] γ-LiAlO 2 substrate was grown by a newly
designed chemical vapor deposition (CVD) reactor. Following the CVD growth, x-ray …

Pure single-phase m-and a-plane GaN layers were fabricated on (100)-and (302)-planes of
γ-LiAlO2 (LAO) substrate via metelorganic vapor deposition, respectively. Raman spectra …

Single phase a-GaN layer has been grown on the small lattice mismatch (302)(-LiAlO2
(LAO) substrate. The epitaxial relationships between a-plane GaN and (302) LAO are [1 1¯ …

(101¯ 0) m-plane ZnO film was epitaxially deposited on (100) γ-LiAlO2 by metal-organic
chemical vapor deposition at 600° C with a GaN buffer layer. The epitaxial relationships …

Abstract Combustion derived LiAlO 2: Er, co-doped with Yb 3+ and Zn 2+ phosphor powders
have been prepared at low furnace temperatures (500° C). Formation of the compound was …

We deposited pure m-plane GaN (11¯ 00) layers on LiAlO2 (100) substrates by MOVPE
using Mg-doped InGaN buffer layers of various thickness. These sealing layers are grown …