Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review
R Rajput, R Vaid - Facta Universitatis, Series: Electronics and …, 2020 - casopisi.junis.ni.ac.rs
Traditional flash memory devices consist of Polysilicon Control Gate (CG)–Oxide-Nitride-
Oxide (ONO-Interpoly Dielectric)–Polysilicon Floating Gate (FG)–Silicon Oxide (Tunnel …
Oxide (ONO-Interpoly Dielectric)–Polysilicon Floating Gate (FG)–Silicon Oxide (Tunnel …
[图书][B] Semiconductor nanocrystals and metal nanoparticles: physical properties and device applications
T Chen, Y Liu - 2016 - taylorfrancis.com
Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
Nanocrystal non-volatile memory devices
ZJ Horváth, P Basa - Materials Science Forum, 2009 - Trans Tech Publ
Nanocrystal Non-Volatile Memory Devices Page 1 Nanocrystal non-volatile memory devices Zs.
J. Horváth a and P. Basa b Hungarian Academy of Sciences, Research Institute for Technical …
J. Horváth a and P. Basa b Hungarian Academy of Sciences, Research Institute for Technical …
Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by
low pressure chemical vapour deposition using a Si3N4 control layer and different SiO2 or …
low pressure chemical vapour deposition using a Si3N4 control layer and different SiO2 or …
Memory effect on CdSe nanocrystals embedded in SiO2 matrix
CdSe nanocrystals (NCs) embedded in a solid SiO2 matrix were fabricated by RF-sputtering
technique. Raman and photoluminescence spectroscopy illustrated the NCs size dependent …
technique. Raman and photoluminescence spectroscopy illustrated the NCs size dependent …
Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron
co-sputtering technique were electrically characterized by means of capacitance–voltage (C …
co-sputtering technique were electrically characterized by means of capacitance–voltage (C …
Nonvolatile memory devices based on self-assembled nanocrystals
JS Lee - Physica E: Low-dimensional Systems and …, 2013 - Elsevier
Nonvolatile memory devices are one of the most important components in modern electronic
devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid …
devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid …
Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures
Charge injection and retention behaviors of metal-nitride-oxide-silicon (MNOS) memory
structures with Si or Ge nanocrystals embedded at a depth of 3nm in the nitride layer were …
structures with Si or Ge nanocrystals embedded at a depth of 3nm in the nitride layer were …
Structure‐related current transport and photoluminescence in SiOxNy and SiNx based superlattices with Si nanocrystals
DM Zhigunov, MN Martyshov, PA Forsh… - … status solidi (a), 2017 - Wiley Online Library
A comparative study of structural properties, photoluminescence and electrical conductivity
of SiOxNy/SiO2, SiOxNy/Si3N4 and SiNx/Si3N4 superlattices is presented. The samples …
of SiOxNy/SiO2, SiOxNy/Si3N4 and SiNx/Si3N4 superlattices is presented. The samples …
Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals
SiO2 layer structures with a middle layer containing Ge nanocrystals were prepared by
sputtering on n-and p-type Si substrates, and by consecutive annealing. Ge content in the …
sputtering on n-and p-type Si substrates, and by consecutive annealing. Ge content in the …