Traditional flash memory devices consist of Polysilicon Control Gate (CG)–Oxide-Nitride-
Oxide (ONO-Interpoly Dielectric)–Polysilicon Floating Gate (FG)–Silicon Oxide (Tunnel …

Nanocrystal Non-Volatile Memory Devices Page 1 Nanocrystal non-volatile memory devices Zs.
J. Horváth a and P. Basa b Hungarian Academy of Sciences, Research Institute for Technical …

This study ponders the prospect of a Plasmon enabled optical memory device to achieve
higher data transfer rates and data density. The device is based upon Silicon as a substrate …

Charge injection and retention behaviors of metal-nitride-oxide-silicon (MNOS) memory
structures with Si or Ge nanocrystals embedded at a depth of 3nm in the nitride layer were …

Charging behaviour of MNOS structures containing Ge nanocrytals embedded at the
SiO2/Si3N4 interface are studied by experiments and by calculating tunnelling probabilities …

We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide
is formed by radical oxidation on the silicon nitride (Si3N4 layer to improve the electrical and …

The charging behavior of MNS (metal-nitride-silicon) and MNOS (metal-nitride-oxide-silicon)
structures containing Si or Ge nanocrystals were studied by capacitance–voltage (C–V) and …

I have determined a systematic dependence of the Si distribution as a function of high-
temperature annealing time in low-pressure chemical vapor deposited SiNx/ncSi/SiNx …

In this study, flash memory cells with high-k dielectric HfO2 as tunnel oxide and group IV (Si,
Ge) nanocrystals were fabricated and tested. The device structure was grown by magnetron …

Memory structures with an embedded sheet ofseparated Si nanocrystals were prepared by
low pressure chemical vapour deposition using a Si3N4 control and Si02 tunnel layers. It …