In this article, an ohmic contact structure based on indium tin oxide (ITO)/Ti/Al/Ni/Au is
explored for high-performance GaN-on-GaN Schottky barrier diode (SBD) for the first time …

We investigated the formation of ohmic contacts as a result of intermetallic phase formation
between V, Al, Ni, and Au in V/Al/Ni/Au metal stacks on n-Al 0.65 Ga 0.35 N: Si. In particular …

In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-
inch free-standing (FS)-GaN is presented with the specific on-state resistance (R on) of 1.34 …

In the framework of fully vertical GaN-on-Silicon device technology development, we report
on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face …

The atmospheric pressure non-equilibrium plasma treatment of open-cell polyurethane
foams is carried out using dielectric barrier discharges fed with helium and oxygen mixtures …

In GaN-based vertical micro LEDs, conventional metal n-contacts on the N face n-GaN suffer
from a low aperture ratio due to the high reflection of metals, resulting in low-light extraction …

In this work, we propose a new approach to obtain as-deposited low-resistivity transparent
ZnO: Al (AZO) ohmic contacts to n-GaN N-face by first modifying the GaN surface by …

We investigated the effect of treating the surface of n-Al 0.87 Ga 0.13 N: Si by O 2 or SF 6
plasma on the properties of subsequently deposited and annealed V/Al/Ni/Au contacts …

Molecular beam epitaxy (MBE) is often considered as an ideal equipment for growing low-
resistance p-type GaN (p-GaN). However, the Ohmic contact formation mechanism of p-GaN …

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign
substrates are highly attractive for the development of device technology. In this work, by …