AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
Highly uniform, self‐assembled AlGaN nanowires for self‐powered solar‐blind photodetector with fast‐response speed and high responsivity
Searching for power‐independent, compact, and highly environment‐sensitive
photodetectors is a critical step towards the realization of next‐generation energy‐efficient …
photodetectors is a critical step towards the realization of next‐generation energy‐efficient …
Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy
p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic
devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type …
devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type …
An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature
In this work, we report on the demonstration of an electrically injected AlGaN nanowire laser
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics
Semiconductor light sources operating in the ultraviolet (UV)-C band (100-280 nm) are in
demand for a broad range of applications but suffer from extremely low efficiency. AlGaN …
demand for a broad range of applications but suffer from extremely low efficiency. AlGaN …
Improving the efficiency of transverse magnetic polarized emission from AlGaN based LEDs by using nanowire photonic crystal
AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) are attractive for a wide
range of applications. To date, however, the best reported external quantum efficiency (EQE) …
range of applications. To date, however, the best reported external quantum efficiency (EQE) …
Molecular beam epitaxial growth and characterization of Al (Ga) N nanowire deep ultraviolet light emitting diodes and lasers
We report on the detailed molecular beam epitaxial growth and characterization of Al (Ga) N
nanowire heterostructures on Si and their applications for deep ultraviolet light emitting …
nanowire heterostructures on Si and their applications for deep ultraviolet light emitting …
Selective-area growth and controlled substrate coupling of transition metal dichalcogenides
Developing a means for true bottom-up, selective-area growth of two-dimensional (2D)
materials on device-ready substrates will enable synthesis in regions only where they are …
materials on device-ready substrates will enable synthesis in regions only where they are …
An electrically injected AlGaN nanowire defect-free photonic crystal ultraviolet laser
We report on the demonstration of an electrically injected AlGaN nanowire photonic crystal
laser that can operate in the ultraviolet spectral range. The nanowire heterostructures were …
laser that can operate in the ultraviolet spectral range. The nanowire heterostructures were …
Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities
MF Vafadar, S Zhao - ACS nano, 2024 - ACS Publications
Despite the importance and exciting progress of surface-emitting (SE) semiconductor lasers,
we have limited choices of lasing wavelength even today. From an application viewpoint, it …
we have limited choices of lasing wavelength even today. From an application viewpoint, it …