Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions
The paper presents a systematic investigation of the dielectric charging and discharging
process in silicon nitride thin films for RF-MEMS capacitive switches. The SiN films were …
process in silicon nitride thin films for RF-MEMS capacitive switches. The SiN films were …
On the influence of environment gases, relative humidity and gas purification on dielectric charging/discharging processes in electrostatically driven MEMS/NEMS …
In this paper, we investigate the impact of environment gases and relative humidity on
dielectric charging phenomenon in electrostatically actuated micro-and nano …
dielectric charging phenomenon in electrostatically actuated micro-and nano …
Nanoscale characterization of the dielectric charging phenomenon in PECVD silicon nitride thin films with various interfacial structures based on Kelvin probe force …
U Zaghloul, GJ Papaioannou, H Wang… - …, 2011 - iopscience.iop.org
This work presents a novel characterization methodology for the dielectric charging
phenomenon in electrostatically driven MEMS devices using Kelvin probe force microscopy …
phenomenon in electrostatically driven MEMS devices using Kelvin probe force microscopy …
Effect of deposition gas ratio, RF power, and substrate temperature on the charging/discharging processes in PECVD silicon nitride films for electrostatic NEMS/MEMS …
U Zaghloul, GJ Papaioannou… - Journal of …, 2011 - ieeexplore.ieee.org
The dependence of the electrical properties of silicon nitride, which is a commonly used
dielectric in nano-and micro-electromechanical systems (NEMS and MEMS), on the …
dielectric in nano-and micro-electromechanical systems (NEMS and MEMS), on the …
A novel low cost failure analysis technique for dielectric charging phenomenon in electrostatically actuated MEMS devices
U Zaghloul, F Coccetti, GJ Papaioannou… - 2010 IEEE …, 2010 - ieeexplore.ieee.org
This work presents a novel failure analysis technique for the dielectric charging
phenomenon in electrostatically driven MEMS devices. The new reliability assessment …
phenomenon in electrostatically driven MEMS devices. The new reliability assessment …
A comprehensive study for dielectric charging process in silicon nitride films for RF MEMS switches using Kelvin probe microscopy
U Zaghloul, A Belarni, F Coccetti… - … Solid-State Sensors …, 2009 - ieeexplore.ieee.org
In this work we present for the first time a systematic investigation for the dielectric charging
in silicon nitride films for RF MEMS capacitive switches based on Kelvin probe microscopy …
in silicon nitride films for RF MEMS capacitive switches based on Kelvin probe microscopy …
New insights into reliability of electrostatic capacitive RF MEMS switches
Among other reliability concerns, the dielectric charging is considered the major failure
mechanism which hinders the commercialization of electrostatic capacitive radio frequency …
mechanism which hinders the commercialization of electrostatic capacitive radio frequency …
[PDF][PDF] Nanoscale and macroscale characterization of the dielectric charging phenomenon and stiction mechanisms for electrostatic MEMS/NEMS reliability
UZ Heiba - 2011 - core.ac.uk
This chapter provides an overview of the presently available knowledge related to the
reliability of electrostatic capacitive MEMS switches with a main focus on the dielectric …
reliability of electrostatic capacitive MEMS switches with a main focus on the dielectric …
[PDF][PDF] Effect of deposition reactive gas ratio, RF power and substrate temperature on the charging/discharging processes in PECVD silicon nitride films based on …
R Plana - 2011 - Citeseer
The dependence of the electrical properties of silicon nitride on the deposition conditions
used to prepare it and consequently on material stoichiometry has not been fully …
used to prepare it and consequently on material stoichiometry has not been fully …