[HTML][HTML] A review on the GaN-on-Si power electronic devices
Y Zhong, J Zhang, S Wu, L Jia, X Yang, Y Liu… - Fundamental …, 2022 - Elsevier
The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …
electronic devices grown on Si substrate. This article provides a concise introduction …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices
(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
Millimeter-wave AlGaN/GaN HEMTs with 43.6% power-added-efficiency at 40 GHz fabricated by atomic layer etching gate recess
Y Zhang, S Huang, K Wei, S Zhang… - IEEE Electron …, 2020 - ieeexplore.ieee.org
Low damage atomic layer etching (ALE) gate recess is developed for fabrication of
millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced …
millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced …
Influence of fin-like configuration parameters on the linearity of AlGaN/GaN HEMTs
In this letter, we explore the impact of configuration parameters for Fin-like high-electron-
mobility transistors (HEMTs) formed by partially etching barrier under the gate on improving …
mobility transistors (HEMTs) formed by partially etching barrier under the gate on improving …
Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High- ZrO2 Gate Dielectric
H Jiang, CW Tang, KM Lau - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
Enhancement-mode GaN MOS-HEMTs with a uniform threshold voltage (V th~ 2.2±0.25 V at
ID= 1 μA/mm) have been achieved by a recess-free barrier engineering technique in …
ID= 1 μA/mm) have been achieved by a recess-free barrier engineering technique in …
Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H₂/N₂ Plasma Pretreatment
B Zhang, J Wang, X Wang, C Wang… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this letter, we demonstrate a high-threshold-voltage and high-current-density normally-off
SiN/AlN/GaN-on-Si MIS-HEMT with in situ low-damage H 2/N 2 plasma pretreatment. The in …
SiN/AlN/GaN-on-Si MIS-HEMT with in situ low-damage H 2/N 2 plasma pretreatment. The in …
A GaN HEMT structure allowing self-terminated, plasma-free etching for high-uniformity, high-mobility enhancement-mode devices
S Lin, M Wang, F Sang, M Tao, CP Wen… - IEEE Electron …, 2016 - ieeexplore.ieee.org
In this letter, a plasma-free etch stop structure is developed for GaN HEMT toward
enhancement-mode operation. The self-terminated precision gate recess is realized by …
enhancement-mode operation. The self-terminated precision gate recess is realized by …