Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which
makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon …
makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon …
One-step method synthesis of cobalt-doped GeZn1. 7ON1. 8 particle for enhanced lithium-ion storage performance
The exploration of alternative anode materials to obtain the satisfactory lithium-ion storage
performance is crucial for next-generation energy storage devices. Herein, the rational …
performance is crucial for next-generation energy storage devices. Herein, the rational …
Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
In this paper, we report studies on Al 2 O 3/Ge/Al 2 O 3 trilayer memory structures deposited
by magnetron sputtering at room temperature on p-Si substrates coated with 3 nm SiO 2 …
by magnetron sputtering at room temperature on p-Si substrates coated with 3 nm SiO 2 …
Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers
D Wang, G He, L Hao, L Qiao, Z Fang… - ACS applied materials & …, 2020 - ACS Publications
In the present study, a comparative study on the influence of different laminated stacks
driven by aomic layer deposition (ALD) on the interfacial and electrcial properties of high …
driven by aomic layer deposition (ALD) on the interfacial and electrcial properties of high …
Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge (100) prepared by PEALD
The study of ultrathin ZrO 2 films grown on surface passivated germanium substrates by
plasma enhanced Atomic Layer Deposition (PEALD) has been carried out. Nitride …
plasma enhanced Atomic Layer Deposition (PEALD) has been carried out. Nitride …
Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties
The metal-organic-decomposed lanthanum cerium oxide (LaCeO 2) solution was spin-
coated on p-type Si substrate to form thin films. The method of microwave-assisted …
coated on p-type Si substrate to form thin films. The method of microwave-assisted …
Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks
Abstract Effects of post deposition annealing (PDA) atmosphere, including oxygen (O 2) gas
and forming gas (FG), on interfacial and electrical properties of a HfO 2 gate dielectric on …
and forming gas (FG), on interfacial and electrical properties of a HfO 2 gate dielectric on …
Exploring the influence of Al content on the optical and interface properties of HfAlOx mixed gate dielectric thin films and their applications in MOS devices
R Zhang, K Tuokedaerhan, H Du, A Maimaiti… - Journal of Materials …, 2024 - Springer
HfAlOx gate dielectric films with different aluminum contents were prepared on silicon
substrates by sol-gel method. Determine the actual Hf: Al ratio for each sample through EDS …
substrates by sol-gel method. Determine the actual Hf: Al ratio for each sample through EDS …
Preparation and performance optimization of HfAlO hybrid gate dielectric thin films driven by solution
R Zhang, K Tuokedaerhan, Z Wu, H Du… - Journal of Sol-Gel …, 2024 - Springer
The drawbacks of binary metal oxide gate media are gradually emerging, and research on
ternary and even multivariate metal oxides is gradually increasing. HfAlO gate dielectric …
ternary and even multivariate metal oxides is gradually increasing. HfAlO gate dielectric …
Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer
The effect of in-situ LaON surface passivation in between La 2 O 3/ZrO 2 bilayer high-k and
N 2 plasma pre-treated 4H–SiC substrate formed by using plasma enhanced atomic layer …
N 2 plasma pre-treated 4H–SiC substrate formed by using plasma enhanced atomic layer …