(54) METHODS FOR FABRICATING 2005/0181540 A1 8/2005 Farnworth et al.
SEMCONDUCTOR COMPONENTS AND 2005/0200028 A1 9, 2005 Farnworth et al …

In a method for producing a nitride semiconductor light emitting device according to the
present invention, first, a nitride semiconductor Substrate having groove portions formed is …

A method of fabricating a nitride-based semiconductor light emitting device capable of
Suppressing reduction of charac teristics and a yield is obtained. This method of fabricating …

The present invention includes: a silicon-based substrate; and an epitaxial growth layer that
has a configuration in which first and second nitride semiconductor layers having different …

Provided is a manufacturing method of a nitride semiconduc tor device having a nitride
semiconductor Substrate (eg GaN Substrate) in which dislocation concentrated regions …

An optical device processing method including a protective layer includes forming a
protective layer of an insulator on the front side of an optical device wafer so as to insulate at …

(57) ABSTRACT A nitride semiconductor laser element comprises a nitride semiconductor
Substrate and a nitride semiconductor layer laminated thereon, wherein the nitride …

In a method for producing a nitride semiconductor light-emitting device according to the
present invention, first, a nitride semiconductor substrate having groove portions formed is …

An optical device wafer has a plurality of optical devices formed on a front side and a
plurality of crossing division lines for partitioning the optical devices, each optical device …

The present disclosure provides a light-emitting device and manufacturing method thereof.
The light-emitting device comprising: a light-emitting stack; and a semiconductor layer …