Radiation-induced charge trapping in shallow trench isolations of FinFETs

[PDF] ieee.org

TID effects in the lateral STI oxide of planar CMOS transistors

S Bonaldo, G Borghello, F Faccio… - … on Nuclear Science, 2024 - ieeexplore.ieee.org
Using comprehensive experimental data and 3D Technology Computer-Aided Design
simulations, this paper discusses the effects and mechanisms of Total Ionizing Dose (TID) in …
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[PDF] ieee.org

Total-Ionizing-Dose and Displacement Damage Effects in Trench SiC Power MOSFETs

S Bonaldo, C Martinella, M Bagatin… - … on Nuclear Science, 2024 - ieeexplore.ieee.org
This study explores the total ionizing dose (TID) and displacement damage (DD) effects in
trench silicon carbide (SiC) power MOSFETs. The effects of X-ray irradiation reveal …
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Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

AI Vidana, NA Dodds, RN Nowlin… - … on Nuclear Science, 2025 - ieeexplore.ieee.org
This paper presents a comparative analysis of total ionizing dose (TID) response in
GlobalFoundries' 12LP and 12LP+ 12nm bulk FinFET technologies using 10keV X-rays. Our …
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[PDF] epfl.ch

Reliability of Advanced Nanoscale CMOS Technology for High-Radiation Environments

G Termo - 2024 - infoscience.epfl.ch
Ionizing and non-ionizing radiation is known to cause damages in electronic components,
resulting in reduced performance and possible failure. This is a major issue for any …
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[PDF] jyu.fi

Ultra-high doses tests on 28nm CMOS technology for high energy physics application

G Ciachera - 2024 - jyx.jyu.fi
This work is about the qualification of next generation of electronics detectors for high
energy physics application. A new upgrade of the Large Hadron Collider, designated as …
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