Provided are methods for fabricating semiconductor devices. The methods for fabricating the
semiconductor devices may include forming a first interlayer insulation film including a …

(57) ABSTRACT A method for tuning the effective work function of a gate structure in a
semiconductor device is described. The semi conductor device is part of an integrated circuit …

BACKGROUND Semiconductor devices are used in a large number of electronic devices,
such as computers, cell phones, and others. Semiconductor devices comprise integrated …

BACKGROUND The dominant semiconductor technology used for the manufacture of ultra-
large scale integrated (ULSI) circuits is the metal-oxide-semiconductor field effect transistor …

(57) ABSTRACT A FinPET includes a semiconductor fin including an inner region, and a
germanium-doped layer on a top surface and sidewall Surfaces of the inner region. The …

Aspects of embodiments provide a semiconductor device having threshold voltages of a
plurality of transistors con trolled. According to an aspect of embodiments, there is provided …

Embodiments for forming a fin field effect transistor (Fin FET) device structure are provided.
The FinFET device structure includes a Substrate and a first fin structure extend ing above …

Exemplary embodiments in accordance with principles of inventive concepts include a
semiconductor device including a Substrate including a first active region, a second active …

Techniques are disclosed for achieving multiple fin dimen sions on a single die or
semiconductor substrate. In some cases, multiple fin dimensions are achieved by lithographi …

(57) ABSTRACT A semiconductor device and a method of manufacturing the same are
disclosed. The method includes forming a semicon ductor fin on a semiconductor substrate …