A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Recommended methods to study resistive switching devices

M Lanza, HSP Wong, E Pop, D Ielmini… - Advanced Electronic …, 2019 - Wiley Online Library
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

Stimuli‐responsive memristive materials for artificial synapses and neuromorphic computing

H Bian, YY Goh, Y Liu, H Ling, L Xie… - Advanced Materials, 2021 - Wiley Online Library
Neuromorphic computing holds promise for building next‐generation intelligent systems in a
more energy‐efficient way than the conventional von Neumann computing architecture …

Memory materials and devices: From concept to application

Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu… - InfoMat, 2020 - Wiley Online Library
Memory cells have always been an important element of information technology. With
emerging technologies like big data and cloud computing, the scale and complexity of data …

Carbon steel corrosion: a review of key surface properties and characterization methods

D Dwivedi, K Lepková, T Becker - RSC advances, 2017 - pubs.rsc.org
Corrosion is a subject of interest to interdisciplinary research communities, combining fields
of materials science, chemistry, physics, metallurgy and chemical engineering. In order to …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Multibit memory operation of metal-oxide bi-layer memristors

S Stathopoulos, A Khiat, M Trapatseli, S Cortese… - Scientific reports, 2017 - nature.com
Emerging nanoionic memristive devices are considered as the memory technology of the
future and have been winning a great deal of attention due to their ability to perform fast and …

Memristive synapses and neurons for bioinspired computing

R Yang, HM Huang, X Guo - Advanced Electronic Materials, 2019 - Wiley Online Library
To realize highly efficient neuromorphic computing that is comparable to biological
counterparts, bioinspired computing systems, consisting of biorealistic artificial synapses …

In-memory learning with analog resistive switching memory: A review and perspective

Y Xi, B Gao, J Tang, A Chen, MF Chang… - Proceedings of the …, 2020 - ieeexplore.ieee.org
In this article, we review the existing analog resistive switching memory (RSM) devices and
their hardware technologies for in-memory learning, as well as their challenges and …

Recent advances in memristive materials for artificial synapses

SG Kim, JS Han, H Kim, SY Kim… - Advanced materials …, 2018 - Wiley Online Library
Neuromorphic architectures are in the spotlight as promising candidates for substituting
current computing systems owing to their high operation speed, scale‐down ability, and …