Large signal RF reliability of 45-nm RFSOI power amplifier cell for Wi-Fi6 applications
A power amplifier cell having a single n-channel transistor fabricated in 45-nm RFSOI
technology is stressed using both DC drain voltage as well as RF power at 7GHz applied to …
technology is stressed using both DC drain voltage as well as RF power at 7GHz applied to …
Analysis of abnormal GIDL current degradation under hot carrier stress in DSOI-MOSFETs
It is generally believed that the gate-induced drain leakage (GIDL) current would increase
with the hot carrier stress (HCS) time. As more interface electron traps are generated near …
with the hot carrier stress (HCS) time. As more interface electron traps are generated near …
Dynamic hot carrier degradation behavior of polycrystalline silicon thin-film transistors under gate voltage pulse stress with fast transition time
Dynamic hot carrier (HC) degradation behavior of polycrystalline silicon (poly-Si) thin-film
transistors (TFTs) under gate voltage pulse stress with fast transition time is systematically …
transistors (TFTs) under gate voltage pulse stress with fast transition time is systematically …