Control of adhesion and desorption behavior of silica particles on InGaAs surfaces by addition of hexadecyltrimethylammonium bromide in ammonium hydroxide …
J Lee, J Na, S Lim - Applied Surface Science, 2022 - Elsevier
The surface properties of InGaAs, such as zeta potential, surface energy components, acid–
base energy constant, and Hamaker constant and its interaction force with silica particles …
base energy constant, and Hamaker constant and its interaction force with silica particles …
Design analysis of 4H-SiC MOSFET for high power application
Silicon Carbide has emerged as a promising candidate due to its superior material
properties such as high breakdown voltage, wide bandgap, and high thermal conductivity. A …
properties such as high breakdown voltage, wide bandgap, and high thermal conductivity. A …
The Influence of Special Environments on SiC MOSFETs
Z Li, J Jiang, Z He, S Hu, Y Shi, Z Zhao, Y He, Y Chen… - Materials, 2023 - mdpi.com
In this work, the influences of special environments (hydrogen gas and high temperature,
high humidity environments) on the performance of three types of SiC MOSFETs are …
high humidity environments) on the performance of three types of SiC MOSFETs are …
Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications
P Goyal, H Kaur - Journal of Electronic Materials, 2024 - Springer
A split-stepped gate field plate design has been incorporated on a gallium oxide (Ga2O3)
metal-oxide semiconductor field-effect transistor (MOSFET). The aim of the present work is to …
metal-oxide semiconductor field-effect transistor (MOSFET). The aim of the present work is to …
Investigating the trade-off between BV stability and ESD robustness in the n-channel LDMOS devices
H Liang, L Li, J Liu, F Lin, C Xu, J Sun… - … Science and Technology, 2024 - iopscience.iop.org
The trade-off between breakdown voltage (BV) stability and electrostatic discharge (ESD)
robustness in n-channel laterally diffused metal–oxide–semiconductor (nLDMOS) devices …
robustness in n-channel laterally diffused metal–oxide–semiconductor (nLDMOS) devices …
Analysis of DCTLDMOS on SOI for power amplifier applications
This work demonstrated a potential LDMOS structure based on trench-gate on SOI known as
dual-channel trench LDMOS (DCTLDMOS). DCTLDMOS structure is designed by …
dual-channel trench LDMOS (DCTLDMOS). DCTLDMOS structure is designed by …
RTS Noise Characterization of Trap Properties in InGaAs nFinFETs
X Xiao, L He, H Chen, X Wang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In order to extract and characterize the trap properties in In x Ga As nFinFET sensitively and
effectively, the time-domain and frequency-domain characteristics of low-frequency noise …
effectively, the time-domain and frequency-domain characteristics of low-frequency noise …