Investigation of modulation bandwidth of InGaN green micro-LEDs by varying quantum barrier thickness
Z Yuan, Y Li, X Lu, Z Wang, P Qiu, X Cui… - … on Electron Devices, 2022 - ieeexplore.ieee.org
InGaN-based micro light-emitting diodes (micro-LEDs) with 5, 10, and 13 nm quantum
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …
Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs
CL Tsai - Journal of Luminescence, 2016 - Elsevier
This study proposes the use of InGaN/GaN superlattices grown beneath InGaN multiple
quantum wells (MQWs) and designed with different well widths to act as an electron emitter …
quantum wells (MQWs) and designed with different well widths to act as an electron emitter …
A systematic exploration of InGaN/GaN quantum well-based light emitting diodes on semipolar orientations
A Das - Optics and Spectroscopy, 2022 - Springer
Light-emitting diodes (LEDs) based on group III-nitride semiconductors (GaN, AlN, and InN)
are crucial elements for solid-state lighting and visible light communication applications. The …
are crucial elements for solid-state lighting and visible light communication applications. The …
Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy
F Zeng, L Zhu, W Liu, X Li, W Liu, BJ Chen… - Journal of Alloys and …, 2016 - Elsevier
We have investigated optical characteristics and carrier recombination dynamics of {1 1¯ 01}
and {11 2¯ 2} semipolar InGaN/GaN quantum wells of light-emitting diodes (LEDs) …
and {11 2¯ 2} semipolar InGaN/GaN quantum wells of light-emitting diodes (LEDs) …
Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate
Z Tian, Y Li, X Su, L Feng, S Wang… - Applied Physics …, 2017 - iopscience.iop.org
We tried to obtain microstructures on a three-dimensional (3D) micropatterned substrate by
laser drilling. The influences of the dimensions of the drilling holes on the morphology and …
laser drilling. The influences of the dimensions of the drilling holes on the morphology and …
Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes
T Lin, ZC Feng - Handbook of Solid-State Lighting and LEDs, 2017 - taylorfrancis.com
The recent researches referring to InGaN/GaN multiple quantum well light-emitting diodes
(MQW LEDs) mainly focused on finding ways to improve the devices' performance, for the …
(MQW LEDs) mainly focused on finding ways to improve the devices' performance, for the …
Study on optical properties of indium-graded semipolar InGaN/GaN quantum well
F Zeng, L Zhu, W Liu, W Liu, H Wang… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
The electronic and optical properties of indium-graded semipolar quantum well (QW)
structures with different indium variation schemes and well widths have been investigated by …
structures with different indium variation schemes and well widths have been investigated by …