After many years of research and development, silicon carbide has emerged as one of the
most important wide band gap semiconductors. The first commercial SiC devices? power …

We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …

Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors with a single amplification
step (pilot thyristor) is reported. It is demonstrated that the switch-on processes in such high …

A computer simulation has been carried out to analyze and explain the specific features of
the switch-on process in super-high-voltage (18 kV class) optically triggered 4H-SiC …

High-voltage 4 H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors,
and thyristors are discussed. The results of experimental and theoretical studies of the …

Современная цивилизация нуждается во все более потребляемых источниках энергии,
чтобы поддерживать прогресс в обществе. Атомная энергия и преобразование …

Temperature dependence of the holding current has been studied in high-voltage (12 kV
class) 4H-SiC optically triggered thyristors in the temperature range from 300 to 425 K. The …

Optical switch-on of a very high voltage (18 kV class) 4H-SiC thyristor with an amplification
step (pilot thyristor) to the current I max= 1225 A is demonstrated using a purely inductive …

The specific features of the temperature and bias dependences of the switch-on gate current
in SiC thyristors are examined analytically for two possible switching mechanisms. The so …