We investigate the possibilities of measuring the band gap of a variety of semiconductors
and insulators by reflection electron energy loss spectroscopy without additional surface …

The diffusivity of oxygen in thin, sputter-deposited TiO 2 films, as can be used in RRAMs, is
measured using electron and ion backscattering techniques. The as-grown sample …

Reflection electron energy loss spectra from some insulating materials (CaCO 3, Li 2 CO 3,
and SiO 2) taken at relatively high incoming electron energies (5–40 keV) are analyzed …

The memristor is one of the most promising devices being studied for multiple uses in future
electronic systems, with applications ranging from nonvolatile memories to artificial neural …

The preparation of nanometer-thick molybdenum-99 (99 Mo) sources using the droplet
deposition method was investigated. The quality of these prepared sources was analyzed …

Electron Rutherford backscattering measures the near‐surface composition of samples
quantitatively. For interpretation, one usually relies on the single‐scattering approximation …

Implantation of Hf films with oxygen ions is shown to be an effective means of fabricating
high-quality HfO 2/HfO x heterostructures at room temperature, with the layer composition …

Gold-implanted aluminum films are used to investigate how reflection electron energy loss
spectra (REELS) change due to the presence of a small concentration of heavy atoms at a …

Electron Rutherford Backscattering (ERBS) is a technique that depends on the recoil energy
transferred from the scattering electron to a nucleus in a large-angle deflection. This energy …