J Cho, Z Li, M Asheghi… - Annual Review of Heat …, 2015 - dl.begellhouse.com
The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology has received much attention in the past decade. The peak …
The efficiency in modern technologies and green energy solutions has boiled down to a thermal engineering problem on the nanoscale. Due to the magnitudes of the thermal mean …
Thermal conductivity in non-metallic crystalline materials results from cumulative contributions of phonons that have a broad range of mean free paths. Here we use high …
TE Beechem, AE McDonald, EJ Fuller… - Journal of Applied …, 2016 - pubs.aip.org
The thermal conductivity of n-and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3–4 μm was investigated using time domain thermoreflectance. Despite …
Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III–V semiconductors, and adversely affect heat dissipation in …
J Cho, Y Li, WE Hoke, DH Altman, M Asheghi… - Physical Review B, 2014 - APS
Strained transition layers, which are common for heteroepitaxial growth of functional semiconductors on foreign substrates, include high defect densities that impair heat …
Interfaces play an essential role in phonon-mediated heat conduction in solids, impacting applications ranging from thermoelectric waste heat recovery to heat dissipation in …
C Hua, AJ Minnich - Journal of Applied Physics, 2015 - pubs.aip.org
Cross-plane heat transport in thin films with thicknesses comparable to the phonon mean free paths is of both fundamental and practical interest for applications such as light-emitting …
Thermal dissipation at the active region of electronic devices is a fundamental process of considerable importance,,. Inadequate heat dissipation can lead to prohibitively large …